《TPowerMosforPowerAugcustomerversion》由会员分享，可在线阅读，更多相关《TPowerMosforPowerAugcustomerversion（50页珍藏版）》请在金锄头文库上搜索。
1、NXP T6 PowerMOSCharles ZhangRegional Marketing Manager Q3 2010PDF created with pdfFactory Pro trial version Business Line Power, 23/02/2009CONFIDENTIAL2NXP Power Discrete LocationsNXP Semiconductors Guandong, China (APG)20002005NXP Semicondutors Jilin Province ,China Wafer manufacturingHuashan China
2、 (Subcon Assembly)NXP Semicondutors Philippines (APP2)19952004PL Bipolar ShanghaiPower Products Manchester, UK Headquarters of BL Power Products 19692003Tak Cheong China (Subcon Assembly)20082008Partner foundry for TrenchMOS, Singapore Trench 4 and 6PDF created with pdfFactory Pro trial version Busi
3、ness Line Power, 23/02/2009CONFIDENTIAL3Trench 6 Technology3Trench 6 manufacturing chain: Waferfab: Chartered Semiconductors in Singapore. 8 inch FabAssembly NXP LFPAK IR DirectFET (MQ size) A competitor “Power SO8” packageThree heatsink configurations were investigated; No heatsink Small finned hea
4、tsink applied directly to the package top Small finned heatsink with insulator (DirectFET only)PCB size and configuration was kept constant in all cases i.e. 2- layer, 2oz copper 35 x 30 x 1.6mm overall size full coverage bottom copper 20 x 20mm top copper (no vias)Performance was analysed with appl
5、ied airflow of 0, 1 and 2m/s, Tamb= 20C.Power dissipation was 1W and predicted junction temperature was recorded for each simulation. From this, Rth j- awas calculated.PDF created with pdfFactory Pro trial version Business Line Power, 23/02/2009CONFIDENTIAL42LFPAK model (no heatsink)LFPAK model (no
6、heatsinkDirectFET model no heatsinkLFPAK model with heatsinkPDF created with pdfFactory Pro trial version Business Line Power, 23/02/2009CONFIDENTIAL43Example of applied airflowPDF created with pdfFactory Pro trial version Business Line Power, 23/02/2009CONFIDENTIAL44Results -no heatsinkRth j- a v a
7、ir speed0.010.020.030.040.050.060.000.511.522.5Air speed (m/s)Rth j- a (K/W)DirectFET no heatsinkCompetitor Power SO8 no heatsinkLFPAK no heatsinkLFPAK has superior performance to DIRECT- FET with no heat sink attachedPDF created with pdfFactory Pro trial version Business Line Power, 23/02/2009CONFI
8、DENTIAL45Comment on results -no heatsinkDirectFET does not perform as well as the other two packages due to its small area of contact between package (drain) and PCB copper;Drain contactsDrain contactsPDF created with pdfFactory Pro trial version Business Line Power, 23/02/2009CONFIDENTIAL46Results
9、-LFPAK, DirectFET and Competitor Power SO8 -with heatsinks0.05.010.015.020.025.030.035.040.045.050.000.511.522.5Air speed (m/s)Rth j- a (K/W)Competitor Power SO8 with heatsinkLFPAK with heatsinkDirectFET with heatsink and insulatorDirectFET with heatsink, no insulatorDirectFET provides only small be
10、nefits over LFPAKWhen airflow is poor then LFPAK can outperform DirectFETPDF created with pdfFactory Pro trial version Business Line Power, 23/02/2009CONFIDENTIAL47Comment on results -with heatsinkWith heatsinks applied, the Rth j- afigures for both packages are decreased, in keeping with expectatio
11、ns.The difference between LFPAK and DirectFET thermal performance is not dramatic, indicating that both benefit from the application of top- side heatsinking.DirectFETs thermal performance is reduced by the presence of the insulator which may be required to provide electrical isolation when a common
12、 heatsink is used on multiple DirectFET devicesPDF created with pdfFactory Pro trial version LFPAK SummaryPDF created with pdfFactory Pro trial version Business Line Power, 23/02/2009CONFIDENTIAL49Proof points shown:Simple, solid package constructionCompatible foot printTolerant of bad solderingBest
13、 pcb / package stress resistanceAutomotive qualified PowerSO8Fairchild - Power56Vishay - PowerP AKInfineon - TDSON- 8NEC - HVSON- 8ON- semi - DFN6Renesas - LFP AKIR - PQFNAOS - PowerSO8Toshiba - P owerSO8 NXP - LFPAK00.20.40.60.811.21.41.61.8Package Height - mmFairchild - Power56Vishay - PowerPAKInf
14、ineon - TDSON- 8NEC - HVSON- 8ON- semi - DFN6Renesas - LFPAKIR - P QFNAOS - PowerSO8Toshiba - PowerSO8 NXP - LFPAK00.511.522.53 Thermal resistance R(thjc) - K/WFairchild -Power56Vishay -PowerPAKInfineon -TDSON- 8NEC -HVSON- 8ON- semi -DFN6Renesas -LFPAKIR -PQFNAOS -PowerSO8Toshiba -PowerSO8 NXP -LFPAK 00.20.40.60.811.2Highest performance PDF created with pdfFactory Pro trial version Business Line Power, 23/02/2009CONFIDENTIAL50PDF created with pdfFactory Pro trial version
