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1、 REV. 1.2 FS8205A-DS-12_EN AUG 2009Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET FSC Properties For Reference OnlyFS8205A Rev. 1.2 2/6 Fortune Semiconductor Corporation 富晶電子股份有限公司富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28
2、094742 Fax：886-2-28094874 www.ic- This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No ri
3、ghts under any patent accompany the sale of the productFSC Properties For Reference OnlyFS8205A Rev. 1.2 3/6 1. Features 1.1 Low on-resistance 1.1.1 RDS(ON) = 25 m MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 35 m MAX. (VGS = 2.5V, ID = 3A) 2. Applications ? Li-ion battery management applications 3. O
4、rdering Information Product Number Description Package Type Quantity/Reel FS8205A TSSOP8 package version TSSOP-8 3,000 4. Pin Assignment 5. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 12 V ID TA = 25 Continuous Drain Current3 6 A ID TA
5、 = 70 Continuous Drain Current3 5 A IDM Pulsed Drain Current1 25 A PD TA = 25 Total Power Dissipation 1 W Linear Derating Factor 0.008 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 6. Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance
6、 Junction-ambient3 Max. 125 /W FSC Properties For Reference OnlyFS8205A Rev. 1.2 4/6 7. Electrical Characteristics Electrical Characteristics Tj = 25 ( unless otherwise specified ) Symbol Parameter Test Conditions Min. Typ. Max.UnitsStatic Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0
7、V, ID = 250uA20 - - V BVDSS/Tj Breakdown Voltage Temperature CoefficientReference to 25, ID=1mA- 0.1 - V/RDS(ON) Static Drain-Source On-Resistance2 VGS = 4.5V, ID = 4A - 21 25 m VGS = 2.5V, ID = 3A - 27 35 m VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 0.5 - 1.0 V Drain-Source Leakage Curren
8、t (Tj = 25) VDS =20V, VGS = 0V - - 1 uA IDSS Drain-Source Leakage Current (Tj = 70) VDS =20V, VGS = 0V - - 25 uA IGSS Gate-Source Leakage VGS = 10V - - 10 uA 8. Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current (Body Diode)VD = VG = 0V, VS = 1.2V -
9、 - 0.83 A VSD Forward On Voltage2 Tj = 25, IS = 1.25A, VGS = 0V- - 1.2 V Notes： 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board；208/W when mounted on Min. copper pad. FSC Properties For Reference OnlyFS8205
10、A Rev. 1.2 5/6 9. Typical Characteristics On-Region characteristics Ta=25Deg-5051015202500.511.52Vds, Drain to Source Voltage ( V )Id, Drain Current ( A )2.0V2.5V3.0V3.5V4.0V4.5VOn-Region characteristics Ta=125Deg-5051015202500.511.52Vds, Drain to Source Voltage ( V )Id, Drain Current ( A )2.0V2.5V3
11、.0V3.5V4.0V4.5VFig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics On-Resistance Variation with TemperatureVgs=4.5V, Ids=4A00.20.40.60.811.21.4-50050100150Temperature ( Deg )Rds(on) - NormalizedDrain - Source On-ResistanceGate Threshold Voltage Temperature CoefficientVgs=Vdg,
12、 Ids=250uA00.20.40.60.811.21.4-50050100150Temperature ( Deg )Vth - NormalizedThreshold VoltageFig 3. Normalized On-Resistance Fig 4. Gate Threshold Variation with Temperature Forward Characteristic of Reverse Diode00.511.522.5-0.30.20.71.2Vsd, Soucre to Drain Voltage ( V )Is (A)Ta=25DegTa=125DegFig
13、5. Forward Characteristic of Reverse Diode FSC Properties For Reference OnlyFS8205A Rev. 1.2 6/6 10. Package Information 11. Revision History Version Date Page Description 1.0 2009/02/10 - Version 1.0 released 1.1 2009/04/28 34 Rds25 TYP 25mohm MAX 32mohm Rds45 TYP 20mohm MAX 25mohm ID TA = 25 6A ID TA = 70 5A ID pulse 300S 25A 1.2 2009/08/04 34 Rds25 TYP 27mohm MAX 35mohm Rds45 TYP 21mohm MAX 25mohm Rds25 ID：3A Rds45 ID：4A FSC Properties For Reference Only
