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1、Compound Semiconductor Device0, / 2;/ 2.dqpkiII =+= (1.1) 其中,()cos2qpkII= ,maxpkqIII=。所以,可以得到: Compound Semiconductor Device this is, however, accompanied by a substantial reduction in RF output power. 图 4 Circuit and waveforms for analysis of reduced conduction angle amplifier modes. The harmonic s
2、hort is realized conceptually with a high-Q parallel resonant “tank” circuit at the fundamental frequency. 注意:以上分析都基于以下两点假设: 1. 器件的膝点电压kneeV的影响忽略不计,即认为0kneeVV=。 2. 功率放大器的输出负载都为最优值,且此负载可以同时实现良好的谐波短路。 实际设计功率放大器,要对结合以上两点进行综合考虑。譬如,对于漏极效率的处理为: dcknee kneeideal dcVV V= (1.11) Reference Steve C. Cripps, “RF Power Amplifiers for Wireless Communications” 2nd Edition, Artech House, 2006