场效应MOS-MEM2302X-E5.0

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1、MEM2302V5.01N-Channel MOSFET MEM2302XGeneral DescriptionFeaturesPin ConfigurationTypical ApplicationAbsolute Maximum RatingsParameterSymbolRatingsUnitDrain-Source VoltageVDSS20VVGate-Source VoltageVGSS8VTA=253Drain CurrentTA=70ID2APulsed Drain Current1,2IDM15ATA=250.7Total Power DissipationTA=70Pd0.

2、46Woperating junction temperatureTj150Storage Temperature RangeTstg-65/150MEM2302XG Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suitslowvoltageapp

3、lications,andlowpower dissipation in a very small outline surface mount package.20V/3A RDS(ON)=29m VGS=4.5V, ID=3A RDS(ON)=36m VGS=2.5V, ID=2A High Density Cell Design For Ultra Low On-Resistance Subminiature surface mount package:SOT23Battery management High speed switch Low power DC to DC converte

4、rMEM2302V5.02Thermal CharacteristicsParameterSymbolRatingsUnitThermal Resistance,Junction-to-AmbientRJA 140/WElectrical Characteristics MEM2302XParameterSymbolTest ConditionMinTypeMaxUnitStatic CharacteristicsDrain-Source Breakdown VoltageV(BR)DSSVGS=0V, ID=250uA2023VGate Threshold VoltageVGS(th)VDS

5、= VGS, ID=250uA0.510.530.85VVDS=0V,VGS=8V1.6100nAGate-Body LeakageIGSSVDS=0V,VGS=-8V0.2100nAZero Gate Voltage Drain CurrentIDSSVDS=20V VGS=0V6.31000nAVGS=4.5V, ID=3A2950mStatic Drain-Source On-ResistanceRDS(ON)VGS=2.5V, ID=2A3665mForward TransconductancegFSVDS= 5 V, ID= 3.6A8SSource-drain (diode for

6、ward) voltageVSDVGS=0V,ID=1.25A0.40.71VDynamic CharacteristicsInput CapacitanceCiss300Output CapacitanceCoss120Reverse Transfer CapacitanceCrssVDS= 10 V, VGS= 0 V, f = 1 MHz80pFSwitching CharacteristicsTurn-On Delay Timetd(on)815Rise Timetr5080Turn-Off Delay Timetd(off)1560Fall-TimetfVDD= 15 V, RL=

7、2.8 ID3.6A VGEN= 4.5V, Rg = 361025nsTotal Gate ChargeQg410Gate-Source ChargeQgs0.65Gate-Drain ChargeQgdVDS= 10V, VGS= 4.5 V, ID= 3.6A1.5nc1、Repetitive rating, pulse width limited by junction temperature. 2、Pulse width 300us , duty cycle 0.5%.MEM2302V5.03Typical Performance CharacteristicsMEM2302V5.04MEM2302V5.05MEM2302V5.06Package Information

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