硅片硅片大全(中英文对照 i-z)

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1、硅片硅片大全硅片硅片大全( (中英文对照中英文对照 I-Z)I-Z)分享 举报| 硅片行业术语大全(中英文对照 I-Z)热 9 徐静文 2009-12-31 15:03 硅片行业术语大全(中英文对照 I-Z)硅片行业术语大全(中英文对照 I-Z)Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶锭 - 由多晶或单晶形成的圆柱体,晶圆片由此切割而成。 Laser Light-Scattering Event - A signal pul

2、se that locates surface imperfections on a wafer. 激光散射 - 由晶圆片表面缺陷引起的脉冲信号。 Lay - The main direction of surface texture on a wafer. 层 - 晶圆片表面结构的主要方向。 Light Point Defect (LPD) (Not preferred; see localized light-scatterer) 光点缺陷(LPD) (不推荐使用,参见“局部光散射” ) Lithography - The process used to transfer patterns

3、 onto wafers. 光刻 - 从掩膜到圆片转移的过程。 Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect. 局部光散射 - 晶圆片表面特征,例如小坑或擦伤导致光线散射,也称为光点缺陷。 Lot - Wafers of similar sizes and characteristics placed together in a shi

4、pment. 批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。 Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area. 多数载流子 - 一种载流子,在半导体材料中起支配作用的空穴或电子,例如在 N 型中是电子。 Mechanical Test Wafer - A silicon wafer used for testing purposes. 机械测试晶圆片 - 用于测试

5、的晶圆片。 Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 m. 微粗糙 - 小于 100 微米的表面粗糙部分。 Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal. Miller 索指数 - 三个整数,用于确定某个并行面。这些整数是来

6、自相同系统的基本向量。 Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable. 最小条件或方向 - 确定晶圆片是否合格的允许条件。Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.

7、少数载流子 - 在半导体材料中不起支配作用的移动电荷,在 P 型中是电子,在 N 型中是空穴。 Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm. 堆垛 - 晶圆片表面超过 0.25 毫米的缺陷。 Notch - An indent on the edge of a wafer used for orientation purposes. 凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。 Orange Peel - A roughened surface that is visible to

8、the unaided eye. 桔皮 - 可以用肉眼看到的粗糙表面 Orthogonal Misorientation - 直角定向误差 - Particle - A small piece of material found on a wafer that is not connected with it. 颗粒 - 晶圆片上的细小物质。 Particle Counting - Wafers that are used to test tools for particle contamination. 颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。 Particulate Contami

9、nation - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer. 颗粒污染 - 晶圆片表面的颗粒。 Pit - A non-removable imperfection found on the surface of a wafer. 深坑 - 一种晶圆片表面无法消除的缺陷。 Point Defect - A crystal defect that is an impurity, such as a l

10、attice vacancy or an interstitial atom. 点缺陷 - 不纯净的晶缺陷,例如格子空缺或原子空隙。 Preferential Etch - 优先蚀刻 - Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications fo

11、r a specific usage, but looser specifications than the prime wafer. 测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求,但是要比主晶圆片要求宽松些。 Primary Orientation Flat - The longest flat found on the wafer. 主定位边 - 晶圆片上最长的定位边。 Process Test Wafer - A wafer that can be used for processes as well as area clea

12、nliness. 加工测试晶圆片 - 用于区域清洁过程中的晶圆片。 Profilometer - A tool that is used for measuring surface topography. 表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。 Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material. 电阻率(电学方面) - 材料反抗或对抗电荷在其中通过的一种物理特性。 Required - The minimum spe

13、cifications needed by the customer when ordering wafers. 必需 - 订购晶圆片时客户必须达到的最小规格。Roughness - The texture found on the surface of the wafer that is spaced very closely together. 粗糙度 - 晶圆片表面间隙很小的纹理。 Saw Marks - Surface irregularities 锯痕 - 表面不规则。 Scan Direction - In the flatness calculation, the directi

14、on of the subsites. 扫描方向 - 平整度测量中,局部平面的方向。 Scanner Site Flatness - 局部平整度扫描仪 - Scratch - A mark that is found on the wafer surface. 擦伤 - 晶圆片表面的痕迹。 Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orien

15、tation of the wafer. 第二定位边 - 比主定位边小的定位边,它的位置决定了晶圆片的类型和晶向。 Shape - 形状 - Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape) 局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。 Site Array - a neighboring set of sites

16、 局部表面系列 - 一系列的相关局部表面。 Site Flatness - 局部平整 - Slip - A defect pattern of small ridges found on the surface of the wafer. 划伤 - 晶圆片表面上的小皱造成的缺陷。 Smudge - A defect or contamination found on the wafer caused by fingerprints. 污迹 - 晶圆片上指纹造成的缺陷或污染。 Sori - Striation - Defects or contaminations found in the shape of a helix. 条痕 - 螺纹上的缺陷或污染。 Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site. 局部子表面 - 局部表面内的区域,也是矩形的。子站中心必

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