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1、中華大學 通訊系,1,Impedance Matching Network Design (II),中華大學 通訊系 田慶誠tienchu.edu.tw03 5186030,中華大學 通訊系,2,Mixed-mode L-Type Matching Network,The shunt inductors and capacitors can be replaced by short and open stubs.,Z=jwL=jZ0tanq,Z0,q=bl,Y=jwC=jY0tanq,Y0,q=bl,中華大學 通訊系,3,Cascaded 50W Transmission line,Z1,G1
2、,G2,Z0=50W, q=bl,G1,G2,以原點為中心順時針畫圓,中華大學 通訊系,4,Distributed L-Type Matching Network,G1,G2,ZT,ZSS,ZOS,ZT,G1,G2,50W,50W,ZT=50W,中華大學 通訊系,5,Distributed Single Section Matching,ZSM1,G3,50W,RAXIS,G3,Only work when R50W and G1/50 mho.(Region I and II),中華大學 通訊系,6,Distributed L-Type Matching Network,ZOS,ZT,G3,
3、50W,ZT= 100W 50W,G3,ZTZSM1,中華大學 通訊系,7,Distributed Single Section Matching,RAXIS,ZSM2,G4,50W,G4,中華大學 通訊系,8,Distributed L-Type Matching Network,ZSS,ZT,G4,50W,ZT= 30W 50W,ZTZSM2,G4,中華大學 通訊系,9,Impedance Q Value,Constant Q Curves,Q=1,Q=3,Q=,For parallel circuits,For series circuits,(wRPCP),(1/wRSCS),中華大學
4、 通訊系,10,Bode Fano Criteria,LosslessMatchingNetwork,CP,RP,GCKT,G(w),CS,RS,GCKT,Broader bandwidthHigher G(w) G(w)=0 only exists at a finite number of frequencies,中華大學 通訊系,11,Bandwidth v.s. Impedance Q Value,RPCP RSCS Q G(w),When impedance Q is higher, it is very hard to design a broadband matching net
5、work! (Mission impossible!)Impedance Q includes every impedances looking into every circuit interfacesBroadband designKeep every Qs Lower (Close real axis of Smith chart)Narrow-band designMake any one or more of Qs higher,中華大學 通訊系,12,Bandwidth of Lumped L-Type Matching,10W,50W,Z,Q Value and bandwidt
6、h is fixed by load impedance,50W,10W,Q=2,中華大學 通訊系,13,Three-Section Impedance Matching Network(T network: Narrow-band design),50W,10W,100W,50W,L1,L4,C2,C3,L1,L4,C2,C3,10W,100W,50W,Q1=3,Q2=1,中華大學 通訊系,14,50W,25W,50W,L2,L3,C1,C4,250W,Three-Section Impedance Matching Network(p network: Narrow-band design
7、),中華大學 通訊系,15,Four-Section Impedance Matching Network(Constant Q band-pass broadband design),50W,22.4W,50W,10W,中華大學 通訊系,16,Three-Section Matching at 1GHz,中華大學 通訊系,17,Four-Section Impedance Matching,中華大學 通訊系,18,Matching Bandwidth v.s. Impedance Q,Lower impedance Q Broadband design,中華大學 通訊系,19,Matchin
8、g Bandwidth v.s. Insertion Loss,InductorQ=10,Narrow band matching Higher dissipating lossLNAHigher noise figure, PALower output power,Foursections,Threesections,中華大學 通訊系,20,Manipulations of TransistorBroadband Impedance Matching,Example: Input Matching of Infineon BFP420 BJTVCE=1V IC=2.5mAInput Matc
9、hing Frequency Range: 1.54.5GHz,中華大學 通訊系,21,Input Reflection Coefficient of BFP420,中華大學 通訊系,22,Step 1 Symmetrical Adjustment,Initial states:Z01=50WTHETA1=8 2.5GHz,中華大學 通訊系,23,Step 1 Symmetrical Adjustment,中華大學 通訊系,24,Step 2 Using Parallel Resonator,Initial states:THETAO=THETAS=45 2.5GHzZ0O=Z0S=50W,中
10、華大學 通訊系,25,Step 2 Using Parallel Resonator,中華大學 通訊系,26,Step 3 Impedance Transformation,Initial states:THETAL= 90 2.5GHzZ0L=SQRT(15*80)=35W,中華大學 通訊系,27,Step 3 Impedance Transformation,中華大學 通訊系,28,Step 4 Optimization,Goal: |S11|1/3,1.5GHz,4.5GHz,中華大學 通訊系,29,Optimized Parameters,850W45459050W50W35W,Ini
11、tial Values,中華大學 通訊系,30,Inter-stage Matching Network,Transistor,InterstageMatchingNetwork,Transistor,GOUT1,GL1,GS2,GIN2,Case (I) Simultaneously complex conjugate matchingCase (II) At least one side is not matched,中華大學 通訊系,31,Simultaneously Complex Conjugate Matching,Case (I) (GOUT1= GL1* and GS2 =GI
12、N2*),No Power Reflection and No power dissipation occurred in matching network.Only Lossless matching network can be used.Any resistive element in matching network will break the rule.,中華大學 通訊系,32,Not Matched at One Side,Case (II) (GL1 = GOUT1* but GS2 GIN2*)For two cascaded LNA stages Case (III) (G
13、L1 GOUT1* but GS2=GIN2*)For two cascaded PA stages Must have resistive element to absorb the reflected power from side A, then no reflection occurred in side B.Only Lossy matching network can be used.However, this work is Mission Almost Impossible !,中華大學 通訊系,33,Question,How to make a inter-stage mat
14、ching network as GL1 = GOUT1* but GS2 GIN2*?,GL1,GOUT1,GS2,GIN2,Possible?,Impossible?,中華大學 通訊系,34,常見積非成是的匹配法(一),Transistor,InterstageMatchingNetwork,Transistor,GOUT1,GL1= GOUT1*Gain matched,GS2 = GIN2* GOPTNoise mismatched,GIN2,Case (II) LNA1: GL1= GOUT1* + LNA2: GS2=GOPTGIN2*,常見做法：幾乎都用 lossless mat
15、ching,Q1,Q2,做法(一),驗證,中華大學 通訊系,35,常見積非成是的匹配法(二),Transistor,InterstageMatchingNetwork,Transistor,Q1,Q2,Case (II) LNA1: GL1=GOUT1* + LNA2: GS2=GOPTGIN2*,Transistor,Transistor,GOUT1,GL1 GOUT1*Gain mismatched,GS2 =GOPTNoise matched,GIN2,常見做法：幾乎都用 lossless matching,做法(二),驗證,中華大學 通訊系,36,常見積非成是的匹配法(三),Case (III) PA1: GL1 =GOPT GOUT1* +PA2: GS2=GIN2*,Transistor,InterstageMatchingNetwork,
