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1、acceptor 受主 donor 施主recombination 复合majority 多子 minority 少子transition region 过渡区depletion region 耗尽区 contact barrier 接触势垒p-n junction pn结 heterojunction/异质结EHP 电子空穴对 homojunction/同质结,Schottky barrier /肖特基势垒 barrier height/势垒高度 ideal/理想的work function/功函数 practical/实际的electron affinity/电子亲和能 Fermi lev
2、el/费米能级 rectifier /整流器electrostatic potential/静电势 breakdown /击穿rectifying contacts/整流接触 Ohmic contacts/欧姆接触 surface state/表面态lattice-matched/晶格匹配的tunneling effect/隧道效应,半导体器件工作的基本方程,泊松方程,电流密度方程,电流连续性方程,Many of the useful properties of a p-n junction can be achieved by simply forming an appropriate me
3、tal-semiconductor(MS) contact.,5.7 Metal-Semiconductor junctions or contacts(金属-半导体结、金-半接触）,5.7.1 Schottky Barriers,http:/en.wikipedia.org/wiki/Walter_H._Schottky,Possibly, in retrospect, Schottkys most important scientific achievement was to develop (in 1914) the well-known classical formula, now w
4、ritten -q2/40x, for the interaction energy between a point charge q and a flat metal surface, when the charge is at a distance x from the surface. Owing to the method of its derivation, this interaction is called the image potential energy (image PE). Schottky based his work on earlier work by (Lord
5、) Kelvin relating to the image PE for a sphere. Schottkys image PE has become a standard component in simple models of the barrier to motion, M(x), experienced by an electron on approaching a metal surface or a metal-semiconductor interface from the inside.,1. Schottky effect,(The image PE is usuall
6、y combined with terms relating to an applied electric field F and to the height h (in the absence of any field) of the barrier. This leads to the following expression for the dependence of the barrier energy on distance x, measured from the electrical surface of the metal, into the vacuum or into th
7、e semiconductor: Here, e is the elementary positive charge, 0 is the electric constant and r is the relative permittivity of the second medium (=1 for vacuum). In the case of a metal-semiconductor junction, this is called a Schottky barrier; in the case of the metal-vacuum interface, this is sometim
8、es called a Schottky-Nordheim barrier. In many contexts, h has to be taken equal to the local work function .This Schottky-Nordheim barrier (SN barrier) has played in important role in the theories of thermionic emission and of field electron emission. Applying the field causes lowering of the barri
9、er, and thus enhances the emission current in thermionic emission. This is called the Schottky effect, and the resulting emission regime is called Schottky emission.,The work function(功函数): The energy with the work function is required to remove an electron at the Fermi level to the vacuum outside t
10、he metal.(Al=4.3eV)the electron affinity(电子亲和能): The energy with the electron affinity is required to remove an electron at the bottom of the conduction band to the vacuum outside the semiconductors.(Si=4.1eV),Four sets of combination:(1)metal-n type semiconductor, qm qs(2)metal-n type semiconductor
11、, qm qs(4)metal-p type semiconductor, qmqs Metal/n-type semiconductor,2. Schottky barriers（肖特基势垒）,charge transfer occurs until the Fermi levels align at equilibrium,the electrostatic potential of the semiconductor must be raised V0the electron energy must be lowered. qV0the depletion region is forme
12、d near the junction.Contact potential barrier: qV0=qm-qspotential barrier height qB= qm-q,B is called Schottky barrier,（2）Metal/p type semiconductor, qmq s,Electrons flow from metal to semiconductor till the Fermi levels align at equilibrium,the electrostatic potential of the semiconductor must be l
13、owered V0the electron energy must be raised qV0the depletion region is formed near the junction.Contact potential barrier: qV0=qs-qm,V0 retards hole diffusion from the semiconductor to the metal,5.7.2 Rectifying contacts(diode),You can treat the Schottky barrier for M/n-type S (or M/p-type S) as the
14、 P+N (or N+P)junction except that no hole injection occurs from the metal into the semiconductor.,(a)Forward bias,Electrons flow from semiconductor to Metal under forward bias.,Case 1: Metal-n type contact,(b)Reverse bias,One important feature is that the saturation current I0 depends upon B and is
15、unaffected by the bias voltage. I0Exp(-q B /kT),How about p-n junction?,For pn junction : For M-S junction,10-11A/cm2,Case 2: metal-p type Schottky contact?,(a)Forward bias,(b)Reverse bias,Holes flow from semiconductor to metal under forward bias.,A reverse voltage increases the barrier for hole flow and the current becomes negligible.,5.7.3 Ohmic contacts(ideal, resistor),
