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1、目前制备石墨烯采用的方法有：微机械剥离法、化学气相沉积法、氧化还原法、溶剂剥离法和溶剂热法等Large-scale pattern growth of graphene films for stretchable transparent electrodesFigure 1 | Synthesis, etching and transfer processes for the largescale and patterned graphene films. a, Synthesis of patterned graphene films on thin nickel layers. b, Et
2、ching using FeCl3 (or acids) and transfer of graphene films using a PDMS stamp. c, Etching using BOE or hydrogen fluoride (HF) solution and transfer of graphene films. RT, room temperature(,25 ).Thin layers of nickel of thickness less than 300nm were deposited on SiO2/Si substrates using an electron
3、-beam evaporator电子束蒸发器 , and the samples were then heated to 1,000 inside a quartz tube under an argon atmosphere. After flowing reaction gas mixtures (CH4:H2:Ar=50:65:200 standard cubic centimetres per minute), we rapidly cooled the samples to room temperature (25) at the rate of ,10/s using flowin
4、g argon. We found that this fast cooling rate is critical关键 in suppressing formation of multiple layers and for separating graphene layers efficiently from the substrate in the later process.In our work,an aqueous iron (III) chloride (FeCl3) solution (1 M) was used as an oxidizing etchant to remove
5、the nickel layers. The net ionic equation of the etching reaction can be represented as follows: 2Fe3+(aq)+Ni(s)=2Fe2+(aq)+Ni2+(aq)This redox process slowly etches the nickel layers effectively within a mild pH range without forming gaseous products or precipitates. In a few minutes, the graphene film separated from the substrate floats on the surface of the solution, and the film is then ready to be transferred to any kind of substrate.Graphene on metal surfaces
