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1、PE632BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSSPDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)THERMAL RESISTANCE RATINGSUNITS1Pulse width limited by maximum junction temperature.2Package limitation current is 23A.3The value of RqJA is measured with the device mou
2、nted on 1in2 FR-4 board with 2oz. Copper, in a still airenvironment with TA =25C.TA= 70 C 12TA = 25 C 2TA = 25 C IDPulsed Drain Current1Continuous Drain Current2Power Dissipation PDTC = 100 CTJ, TstgRqJA70209TA = 70 C 1.3IDTc = 25 C30VTc = 100 CPARAMETERS/TEST CONDITIONSRDS(ON)Drain-Source Voltage4.
3、5m VGS = 10V 53AGate-Source VoltageJunction-to-Ambient3THERMAL RESISTANCEAvalanche Energy L =0.1mHIAS 37.5Junction-to-Case RqJCIDMVGSLIMITSTC = 25 CEASMAXIMUMAvalanche CurrentUNITS33TYPICALVDS 30 VSYMBOL15WOperating Junction & Storage Temperature RangeSYMBOLC-55 to 15063AV5.5 C / W22.753100mJREV 1.0
4、 1 2014-2-28PE632BAN-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)MIN TYP MAX301.3 1.7 2.3100 nA1104 5.53.3 4.560 S22103902341.4 44.1236132515541722.7 A1 V26.7 nS12.9 nC1Pulse test : Pulse Width 300 msec, Duty Cycle 2 .2Independent of operating tempera
5、ture.Input CapacitanceVGS = 0V, VDS = 15V, f = 1MHzPARAMETEROutput CapacitanceVGS = 10V , ID = 15AVDS = 20V, VGS = 0V, TJ = 125 CSYMBOLVDS = 15V , ID = 15AGate-Drain Charge2Gate-Source Charge2Reverse Transfer CapacitanceGate ResistanceTotal Gate Charge2Qg(VGS=10V)Qg(VGS=4.5V)CrssVDS = VGS, ID = 250m
6、AVGS = 0V, ID = 250mAGate-Body LeakageVGS(th)LIMITSRise Time2Turn-Off Delay Time2Fall Time2Gate Threshold VoltageDrain-Source On-StateResistance1RgIF = 15A, VGS = 0VnSVDD= 15V,ID 15A, VGEN = 10V, RG= 6SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C)td(on)trtd(off)tfTurn-On Delay Time2pFIDS
7、SQrrReverse Recovery ChargeContinuous CurrentForward Voltage1Reverse Recovery TimeISVSDtrrSTATICnCVGS = 0V, VDS = 0V, f = 1MHzQgsmADYNAMICmVDS = 24V, VGS = 0VQgdCissVDS = 5V, ID = 15AVDS = 0V, VGS = 20VgfsRDS(ON)Forward Transconductance1V(BR)DSSTEST CONDITIONSDrain-Source BreakdownVoltage VVGS = 4.5V, ID = 15AIF = 15A, dlF/dt = 100A / SUNITSCossZero Gate Voltage DrainCurrentIGSSREV 1.0 2 2014-2-28PE632BAN-Channel Enhancement Mode MOSFETREV 1.0 3 2014-2-28PE632BAN-Channel Enhancement Mode MOSFETREV 1.0 4 2014-2-28PE632BAN-Channel Enhancement Mode MOSFETREV 1.0 5 2014-2-28
