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1、Overview Of Power Electronic Devices电力电子器件概述孙闯（上海发电设备成套设计研究院，学号P200909071）Overview Of Power Electronic DevicesSun Chuang (Shanghai Power Equipment Research Institute, Minhang District, Shanghai,200240,China)ABSTRACT: Given the characteristics of an ideal power electronic device, and classified the e
2、xisting power electronic devices.KEY WORDS: ideal power electronic device; switching characteristics1. The characteristics of an ideal power electronic deviceThere are many types of power switching devices ,however, has its advantages and disadvantages and is suitable to specific applications. The m
3、otivation behind the development of any new device is to achieve the characteristics of an ideal switch. Therefore, the characteristics of any real device can be compared and evaluated with reference to the characteristics of an ideal switch.The characteristics of an ideal power electronic device ar
4、e as follows1:1.1 In the on-state when the switch is on, it must have (a) the ability to carry a high forward current , tending to infinity; (b) a low on-state forward voltage drop , tending to zero; and (c) a low on-state resistance , tending to zero. Low causes low on-state power loss . These symb
5、ols are normally referred to under dc steady-state conditions.1.2 In the off-state when the switch is off, it must have (a) the ability to withstand a high forward or reverse voltage , tending to infinity; (b) a low off-state leakage current , tending to zero; and (c) a high off-state resistance , t
6、ending to infinity. High causes low off-state power loss . These symbols are normally referred to under dc steady-state conditions.1.3 During the turn-on and turn-off process, it must be completely turned on and off instantaneously so that the device can be operated at high frequencies. Thus, it mus
7、t have (a) a low delay time , tending to zero; (b) a low rise time , tending to zero; (c) a low storage time , tending to zero; and (d) a low fall time , tending to zero.1.4 For turn-on and turn-off, it must require (a) a low gate-drive power , tending to zero; (b) a low gate-drive voltage , tending
8、 to zero; and (c) a low gate-drive current , tending to zero.1.5 Both turn-on and turn-off must be controllable. Thus, it must turn on with a gate signal(e.g., positive) and must turn off with another gate signal(e.g., zero or negative).1.6 For turning on and off, it should require a pulse signal on
9、ly, that is, a small pulse with a very small width , tending to zero.1.7 It must have a high , tending to infinity. That is, the switch must be capable of handing rapid changes of the voltage across it.1.8 It must have a high , tending to infinity. That is, the switch must be capable of handing rapi
10、d changes of the current through it.1.9 It requires very low thermal impedance from the internal junction to the ambient , tending to zero so that it can transmit heat to the ambient easily.1.10 The ability to sustain any fault current for a long time is needed; that is, it must have a high value of
11、 , tending to infinity.1.11 Negative temperature coefficient on the conducted current is required to result in an equal current sharing when the devices are operated in parallel.1.12 Low price is a very important consideration for reduced cost of the power electronics equipment.2. Classification of
12、power electronic devicesSince the first thyristor SCR was develop in late 1957, there have been tremendous advances in the power semiconductor devices. Until 1970, the conventional thyristors had been exclusively used for power control in industrial applications. Since 1970, various types of power s
13、emiconductor devices were developed and became commercially available. Fig.1 shows the switching characteristics of power semiconductors, which are made of either silicon or silicon carbide. Silicon carbide devices are, however, under development. A majority of the devices are made of silicon. There
14、 are a variety of classifications of power electronic devices. For example, these devices can be divided broadly into three types2: power diodes, transistors, and thyristors. Also these can be divided broadly into five types: power diodes, thyristors, power bipolar junction transistors (BJTs), power
15、 metal oxide semiconductor field-effect transistors (MOSFETs), and insulate-gate bipolar transistors (IGBTs) and static induction transistors (SITs).A new classification of power electronic devices are as follows:1. Uncontrolled turn on and off: power diode;2. Controlled turn on and uncontrolled tur
16、n off: silicon controlled rectifier (SCR), RCT, TRIAC;3. Controlled turn-on and turn-off characteristics: UJT, BJT, N-MOSFET, P-MOSFET , SIT, gate turn-off thyristor (GTO), static induction transistor (SITH), IGBT, MOS-controlled thyristor (MCT), integrated gate-commutated thyristor (IGCT), IEGT, ETO, MTO, COOLMOS;4. Continuous gate signal requirement: BJT, MOSFET, IGBT, SIT, COOLMOS, MCT;5. Pulse gate requirement: SCR,
