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1、精品资料推荐Abruptjunction突变结Acceleratedtesting加速实验 Acceptor受主Acceptoratom受主原子 Accumulation积累、堆积Accumulatingcontact积累接触 Accumulationregion积累区Accumulationlayer积累层 Activeregion有源区Activecomponent有源元 Activedevice有源器件Activation激活 Activationenergy激活能Activeregion有源（放大）区 Admittance导纳Allowedband允带 Alloy-junctionde
2、vice合金结器件Aluminum(Aluminium)铝 Aluminum?oxide铝氧化物Aluminumpassivation铝钝化 Ambipolar双极的Ambienttemperature环境温度 Amorphous无定形的，非晶体的Amplifier功放扩音器放大器 Analogue(Analog)comparator模拟比较器Angstrom埃 Anneal退火Anisotropic各向异性的 Anode阳极Arsenic(AS)砷 Auger俄歇Augerprocess俄歇过程 Avalanche雪崩Avalanchebreakdown雪崩击穿 Avalancheexcit
3、ation雪崩激发 Backgroundcarrier本底载流子Backgrounddoping本底掺杂 Backward反向Backwardbias反向偏置 Ballastingresistor整流电阻Ballbond球形键合 Band能带Bandgap能带间隙 Barrier势垒Barrierlayer势垒层 Barrierwidth势垒宽度Base基极 Basecontact基区接触Basestretching基区扩展效应 Basetransittime基区渡越时间Basetransportefficiency基区输运系数 Base-widthmodulation基区宽度调制Basisv
4、ector基矢 Bias偏置Bilateralswitch双向开关 Binarycode二进制代码Binarycompoundsemiconductor二元化合物半导体 Bipolar双极性的BipolarJunctionTransistor(BJT)双极晶体管 Bloch布洛赫Blockingband阻挡能带 Blockingcontact阻挡接触Body-centered体心立方 Body-centredcubicstructure体立心结构Boltzmann波尔兹曼 Bond键、键合Bondingelectron价电子 Bondingpad键合点Bootstrapcircuit自举电路
5、Bootstrappedemitterfollower自举射极跟随器Boron硼 Borosilicateglass硼硅玻璃Boundarycondition边界条件 Boundelectron束缚电子Breadboard模拟板、实验板 Breakdown击穿Breakover转折 Brillouin布里渊Brillouinzone布里渊区 Built-in内建的Build-inelectricfield内建电场 Bulk体/体内Bulkabsorption体吸收 Bulkgeneration体产生Bulkrecombination体复合 Burn-in老化Burnout烧毁 Buriedch
6、annel埋沟Burieddiffusionregion隐埋扩散区Can外壳Capacitance电容 Capturecrosssection俘获截面Capturecarrier俘获载流子 Carrier载流子、载波Carrybit进位位 Carry-inbit进位输入Carry-outbit进位输出 Cascade级联Case管壳 Cathode阴极Center中心 Ceramic陶瓷（的）Channel沟道 Channelbreakdown沟道击穿Channelcurrent沟道电流 Channeldoping沟道掺杂Channelshortening沟道缩短 Channelwidth沟道
7、宽度Characteristicimpedance特征阻抗 Charge电荷、充电Charge-compensationeffects电荷补偿效应 Chargeconservation电荷守恒Chargeneutralitycondition电中性条件 Chargedrive/exchange/sharing/transfer/storage电荷驱动/交换/共享/转移/存储 Chemmicaletching化学腐蚀法Chemically-Polish化学抛光 Chemmically-MechanicallyPolish(CMP)化学机械抛光Chip芯片 Chipyield芯片成品率Clampe
8、d箝位 Clampingdiode箝位二极管Cleavageplane解理面 Clockrate时钟频率Clockgenerator时钟发生器 Clockflip-flop时钟触发器Close-packedstructure密堆积结构 Close-loopgain闭环增益Collector集电极 Collision碰撞CompensatedOP-AMP补偿运放 Common-base/collector/emitterconnection共基极/集电极/发射极连接 Common-gate/drain/sourceconnection共栅/漏/源连接 Common-modegain共模增益Com
9、mon-modeinput共模输入 Common-moderejectionratio(CMRR)共模抑制比 Compatibility兼容性Compensation补偿 Compensatedimpurities补偿杂质Compensatedsemiconductor补偿半导体 ComplementaryDarlingtoncircuit互补达林顿电路 ComplementaryMetal-Oxide-SemiconductorField-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管 Complementaryerrorfunction余误差函数 Comp
10、uter-aideddesign(CAD)/test(CAT)/manufacture(CAM)计算机辅助设计/测试/制 造 CompoundSemiconductor化合物半导体Conductance电导 Conductionband(edge)导带(底)Conductionlevel/state导带态 Conductor导体Conductivity电导率 Configuration组态Conlomb库仑 ConpledConfigurationDevices结构组态Constants物理常数 Constantenergysurface等能面Constant-sourcediffusion恒
11、定源扩散 Contact接触Contamination治污 Continuityequation连续性方程Contacthole接触孔 Contactpotential接触电势Continuitycondition连续性条件 Contradoping反掺杂Controlled受控的 Converter转换器Conveyer传输器 Copperinterconnectionsystem铜互连系统Couping耦合 Covalent共阶的Crossover跨交 Critical临界的Crossunder穿交 Crucible坩埚Crystaldefect/face/orientation/latt
12、ice晶体缺陷/晶面/晶向/晶格 Currentdensity电流密度Curvature曲率 Cutoff截止Currentdrift/dirve/sharing电流漂移/驱动/共享 CurrentSense电流取样Curvature弯曲 Customintegratedcircuit定制集成电路Cylindrical柱面的 Czochralshicrystal直立单晶 Czochralskitechnique切克劳斯基技术（Cz法直拉晶体J）Danglingbonds悬挂键Darkcurrent暗电流 Deadtime空载时间Debyelength德拜长度 De.broglie德布洛意Decderate减速 Decibel(dB)分贝Decode译码 Deepacceptorlevel深受主能级Deepdonorlevel深施主能级 Deepimpuritylevel深度杂质能级Deeptrap深陷阱 Defeat缺陷 Degeneratesemiconductor简并半导体Degeneracy简并度 Degradation退化DegreeCelsius(centigrade)/Kelvin摄氏
