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1、毕业设计（论文）题 目： 压力传感器温度补偿的研究 姓 名： 学 号： 指导教师(职称)： 专 业： 班 级： 所 在 学 院： 2013年 6 月 目 录摘 要 . IIAbstract . III第一章 绪论. 11.1 压力传感器概述 .11.2 压力传感器的现状及发展趋势. . .11.3 硅桥式压阻压力传感器的简介及特点. . .31.4 温度补偿的意义. . .31.5 论文安排. . .4第二章硅桥式压阻压力传感器的原理及分析.52.1 硅桥式压阻压力传感器工作原理. 52.2 硅桥式压阻压力传感器温度漂移产生的机理. .72.3 压力传感器的性能指标. .8第三章硅桥式压阻压力
2、传感器温度补偿研究. .113.1 温度补偿的技术指标. .113.2 常见的补偿方式简介. 113.3 传感器的输出温度特性研究. .133.4 补偿思路. 13第四章温度补偿电路的设计. 154.1温度补偿电路结构分析. 154.2带隙基准电压源的电路设计. 154.3 PTAT电压和激励电压源的产生. 294.4电压缓冲器的设计.304.5总体电路设计. .31总结 .33致 谢 .34参考文献 .35摘要随着现代工业向着微型化、集成化、精密化发展,实现精确测量就显得非常重要，对传感器的精度要求越来越高成为必然。硅桥式压阻压力传感器以其线性度好、灵敏度高、体积小、便于集成等诸多优点,成为
3、现今被应用最多旳压力传感器。硅桥式压阻压力传感器是利用半导体的压阻效应来实现从作用力至电信号的转换，较之于传统的电阻应变式传感器具有灵敏度高，线性度好，滞后性小，体积小，响应快，便于与调理电路集成、测量精度高、稳定性好、频率响应范围宽、易于小型化等显著优点，因此得到了迅速的发展，并被应用到各个领域。但是硅桥式压阻压力传感器因为其使用的半导体材料硅的固有特性，其存在着一致性、温度漂移和非线性等问题。其中受温度的影响最大，不同温度下传感器的灵敏度和测量精度的差别很大，这就大大的影响了硅桥式压阻压力传感器应用。故对硅桥式压阻压力传感器的温度补偿研究工作就显得十分重要。基于硅桥式压阻压力传感器的结构和
4、原理，本文分析温度漂移产生的原因，分析了零位温度漂移和灵敏度温度漂移。根据在常电压供电,恒定压力下传感器的输出灵敏度温度特性方程,设计了一个输出与温度呈线性正比的激励电压源来驱动传感器的温度补偿方案。给出了激励电压源的温度特性方程,并分析了实现温度补偿需要满足的条件。根据电压源的温度特性方程设计了补偿电路的各模块，其中包括：电压缓冲器、PTAT电路和带隙基准电压源。Kujik结构是带隙基准电压源的核心电路，本论文在此对它作了改进。通过叠加共源共栅结构来提高了电源电压抑制比，并且运用了深度负反馈的两级折叠式共源共栅运算放大器来“钳位”。PTAT电压从带隙基准电压源中获得，并与基准电压相加得到了所
5、需温度特性的激励电压。在激励电压之间增加了一个电压缓冲器来解决传感器的输入电阻较小的问题。电压缓冲器是一个两级运算放大器，其输出跟随激励电压直接驱动传感器。关键字：硅桥式压阻压力传感器；温度补偿；PTAT电路；带隙基准电压源Abstract With the modern industrial developing towards miniaturization,integration and precision,accurate measurement is important.Therefore,there are higher requirements.The silicon bridg
6、e piezoresistive pressure sensor with its good linearity, high sensitivity, small size, easy integration and many other advantages, has became the most widely used pressure sensor.The silicon bridge piezoresistive pressure sensor can fulfill the function from acting force to electticity signal by us
7、ing the semiconductor piezoresistive effect. Compared with traditional resistance strain-gage transducer, The silicon bridge piezoresistive pressure sensor has the advantages of good linearity, high sensitivity，small lag ,small size,higher performance and response speed, and it can be integrated to
8、conditioning circuit with high measurement precision, good stability, wide working frequency range and being miniaturized and produced easily, all of which make it rapidly developed and widely used to each field. But due to materials and processes of this sensor,the consistency ,the temperature drif
9、t inevitably and nonlinearity occur. Owing to the characteristic, in the unstable temperature environment, its application is limited. So its very important to research the temperature compensation.From the structure and principles of the silicon bridge piezoresistive pressure sensor, based on the m
10、echanism of temperature drift,zero temperature drift and sensitivity temperature drift are analyzed. According as the temperature characteristic equation of the sensor output sensitivity under 5V supply voltage with a constant input pressure, the scheme of using a excitation voltage source with incr
11、easing output voltage linearly by increasing temperature to drive the sensor is designed. he temperature characteristic equation of the voltage source is presented, and the conditions to achieve temperature compensation are analyzed.On the basis of the temperature characteristic equation of the volt
12、age source, the modules of compensation circuit are designed, including: , the voltage buffer ,PTAT voltage and the bandgap reference voltage source. The core circuit of the bandgap reference voltage source is Kujik structure, and it has been improved by adding cascade devices to improve power suppl
13、y rejection ratio in this research. Using a two folded cascade operational voltage amplifier in deep negative feedback state to ”clamp voltage The PTAT voltage is obtained from the bandgap reference voltage source circuit, which is summed with the reference voltage can get the excitation voltage of the de
