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1、OLED EncapsulationOLED Encapsulation 曾啟光 新顯示技術研發處 部 中央研究所 曾啟光 新顯示技術研發處 部 中央研究所FPD研發中心研發中心 Email tzenck tw Ext 5812 1 ContentsContents Introductions OLED Structure Process Flow OLED Encapsulation Process CPT Current Studies on Advanced Encapsulation Introductions OLED Structure Process Flow Introduct
2、ions OLED Structure Process Flow 3 Why OLED Why OLED 自發光自發光 亮度高亮度高 105nits 無視角限制無視角限制 160o 厚度薄厚度薄 1 75mm 含偏光板含偏光板 可撓曲可撓曲 高色彩飽和度高色彩飽和度 高應答速度高應答速度 few mS LCD 20 30ms 操作溫度範圍廣操作溫度範圍廣 20 70 製程簡單製程簡單 4 OLED Basic StructureOLED Basic Structure 陰極 Cathode 電子傳遞層 ETL 發光層 EML 電洞傳遞層 HTL 電洞注入層 HIL 陽極ITO Anode 基板
3、 光 5 10V 2000A 5 PM AMOLEDPM AMOLED T1 Gate line Cs Data line T2 6 PM AMOLEDPM AMOLED Comparison 7 How OLED Emits the Light How OLED Emits the Light 能階圖能階圖 TPD Alq ITO Anode Mg Ag 2 4 5 5 3 1 5 8 5 0 3 7 載子注入電極 電子傳遞層 電洞傳遞層 載子於電子傳遞層載子於電子傳遞層 電洞傳遞層界面附近再結合電洞傳遞層界面附近再結合 8 Process FlowProcess Flow Equip co
4、nfiguration 1 TFT Loading 2 Pre treatment 3 CVD CFx Dep 4 HIL HTL Dep 5 EML R Dep 6 EML G Dep Cap Glass Loading 7 EML B Dep 1 Glue Dispensing 8 EIL ETL Dep 2 Dessicant Att 9 Metal Dep 10 3 Encapsulation 11 4 Unloading Clean bake 9 Evaporation ChamberEvaporation Chamber 10 EvaporizationEvaporization
5、Emitting Layer Deposition Emitting Layer Deposition Emitting Layer Deposition ETL Metal Deposition HIL HTL Deposition 11 OLED Encapsulation ProcessOLED Encapsulation Process 13 Purposes of EncapsulationPurposes of Encapsulation A key process in the whole OLED manufacturing H2O O2enhances device dete
6、rioration Chemical reaction between metal cathode and organics A non emitting black spot is formed Life time and luminescence decrease A clean dry environment is essential for OLED devices 14 RequirementsRequirements Permeability Thickness weight Cost Step coverage Transmittance Stress coherency Fle
7、xible 15 Sealing Components Process ParameterSealing Components Process Parameter Substrate Cap glass sand blasting Desiccant UV lamp glue Vacuum or N2atmosphere 真空度真空度 UV glue curing UV glue 塗佈及壓合前後精度塗佈及壓合前後精度 Desiccant 貼合精度貼合精度 LiF Al Glue Cap Dryer ITO HTL EML ETL 16 Cap Glass OLED Device Substra
8、teCap Glass OLED Device Substrate 17 Desiccants and makersDesiccants and makers Gore Tex Japan 18 Purposes of SealingPurposes of Sealing Permeability 19 Purposes of SealingPurposes of Sealing Permeability 20 Mechanism and Phenomenon of DeteriorationMechanism and Phenomenon of Deterioration Schematic
9、 diagram of H2O O2penetration path 21 Purposes of SealingPurposes of Sealing Non emitting area black spot caused by H2O O2 Adv Funct Mater 2001 11 No 2 April p116 22 Purposes of SealingPurposes of Sealing Luminescence deterioration p 2195 23 p 2195 24 ComparisonsComparisons Cost Mass production XFle
10、xible Weight thickness OLED life time H2O O2 resistance Thin filmEncap glassMethods 25 Desiccants and MakersDesiccants and Makers Powder CaO BaO SrO Liquid transparent Futaba non transparent Kodak etc Tape Dynic Japan Gore Tex Japan Saes Getters Italy RND s Korea 包狀包狀 FPD Show 2004FPD Show 2004 27 A
11、UO s Double Sided AMOLEDAUO s Double Sided AMOLED 28 Vitex s BarixTMTechnologyVitex s BarixTMTechnology 29 20 1 AMOLED LG20 1 AMOLED LG 30 17 AMOLED SamSung SDI17 AMOLED SamSung SDI CPT Current Studies on Advanced Encapsulation CPT Current Studies on Advanced Encapsulation 32 CPT Current Studies on
12、Advanced EncapsulationCPT Current Studies on Advanced Encapsulation Requirement Thin film type Good H2O O2block capabilities Cap glass no need Stress coherence Transparency Pin hole free Flexible substrate achievable 33 CPT Current Studies on Advanced EncapsulationCPT Current Studies on Advanced Enc
13、apsulation Present patents of other inventors e Magin US0052752A1 Layer 1 Dielectric oxide by or ALD Layer 2 Parylene N or C or D Layer 1 3 Dielectric oxide by ALD Layer 2 Parylene N or C or D Dielectric oxide Al2O3 SiO2 TiO2 ZrO2 MgO HfO2 Ta2O5etc 34 CPT Current Studies on Advanced EncapsulationCPT
14、 Current Studies on Advanced Encapsulation Vitex Battelle US006268695 US006497598 etc Foundation and top structure composed of ceramic and polymer Ceramics In2O3 SnO3 ITO Al2O3 TiO2 AlN SiN SiC SiON SiO2by vacuum sputtering plasma deposition Vitex s BarixTM 35 CPT Current Studies on Advanced Encapsu
15、lationCPT Current Studies on Advanced Encapsulation Equipments and integration concept Plasma coating system SHI ITO SiO source can be changed automatically SiO source ITO source Carrier Storage Unit mask for ITO carrier for ITO mask for SiON carrier for SiON BC1gate1gate2 Robot hand substrateTR3TR1
16、TR2 PCC Cookson Parylene C Cl polymer 36 CPT Current Studies on Advanced EncapsulationCPT Current Studies on Advanced Encapsulation SHI Plasma Coating System For SiON SiO ITO GVD PTFE 37 SELVAC ICP CVD CFx PTFE SiON SiOx SiNx 電子加速方向 38 Vitex Some Demo StudiesSome Demo Studies 40 CPT Current Studies on Advanced EncapsulationCPT Current Studies on Advanced Encapsulation Single layer SiOxNy SiOx Parylene Multi layer SiOxNy SiOx Subs SiOxNy SiOx Parylene Subs SiOx SiOxNy Parylene Subs Structure of t
