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1、 硕 士 学 位 论 文题 目: CMOS毫米波功率放大器研究及设计研 究 生 专 业 电路与系统 指导教师 教授 完成日期 2010年12月 杭州电子科技大学硕士学位论文CMOS毫米波功率放大器研究及设计研 究 生： 指导教师： 教授2010年12月Dissertation Submitted to Hangzhou Dianzi University for the Degree of MasterCMOS Millimeter Wave Power Amplifier Research and Design Candidate: Wu GuofengSupervisor: Prof. S
2、un Lingling10，2010杭州电子科技大学硕士学位论文摘 要近年来，随着无线通信技术的迅速发展，具有宽频带、高传输速率等性能的毫米波电路已成为移动通信系统的发展趋势。标准CMOS工艺特征尺寸持续减小使MOSFET的单位电流增益频率及单位功率增益频率已经达到了上百GHz甚至几百GHz，这为基于标准CMOS工艺设计毫米波射频前端电路提供可能性。CMOS工艺中器件模型准确度及低品质因数、高损耗的无源器件是CMOS毫米波功率放大器设计的瓶颈；CMOS工艺中低跨导、低击穿电压的MOSFET器件是实现CMOS毫米波功率放大器的又一难点。针对CMOS毫米波功率放大器设计的瓶颈及难点，本文对CMOS
3、硅基传输线进行了详细研究并基于SMIC 0.18m CMOS工艺设计毫米波带通滤波器，接着详细研究了CMOS毫米波功率放大器设计要点并基于IBM 90nm CMOS工艺设计了24GHz宽带功率放大器。本文内容简述如下：1、本文在系统地介绍硅基传输线基本性能指标，对比研究几种不同结构的硅基传输线，对比分析硅基传输线的几种模型及简要讨论毫米波硅基传输线不连续性和应对策略的基础上，着重研究了基于SMIC 0.18m RF-CMOS工艺垂直地平面共面波导(VGP CPW)，对比研究了共面波导(CPW)和VGP CPW，讨论了两者的损耗、特征阻抗及隔离特性，建立了VGP CPW长度可扩展的传输线模型。使
4、用特制阻抗为50ohms的低损耗VGP CPW传输线结构，结合VGP CPW长度可扩展模型与电磁(EM)分析方法设计了30GHz带通滤波器。在片测试结果表明，该毫米波VGP CPW传输线滤波器模型仿真和电磁场仿真S参数曲线与测试结果较吻合，能够为毫米波集成电路滤波器设计提供实用性的借鉴。2、以学习射频功率放大器基本性能指标、工作分类标准、输入和输出匹配结构及Cripps理论为基础，着重总结了毫米波电路的优点，介绍了利用CMOS工艺设计毫米波射频功率放大器的面临的挑战，并针对设计挑战提出了有效的应对策略。最后利用IBM 90 nm RF-CMOS工艺设计了全集成24GHz宽带功率放大器，芯片面积
5、为1.2mm*0.67mm。电路由两级自偏置共源共栅(Cascode)级联构成，自偏置Cascode结构不仅可以提高增益、增加反向隔离，且能有效缓解栅氧击穿和热载流子效应带来的可靠性问题。电路以A类工作模式且2.2V工作电压下，射频功率放大器仿真得到：功率增益等于18dB，输入端反射系数小于-12dB，22GHz-26GHz频段内的1dB压缩点输出功率大于15dBm,最大功率附加效率为14%。综上，本文对毫米波电路中常用的分布式硅基传输线进行了完整研究，且成功设计传输线30GHz带通滤波器；基于IBM 90 nm RF-CMOS工艺设计了24GHz宽带功率放大器。本文为采用CMOS工艺设计实现
6、毫米波功率放大器奠定了良好的基础。关键词： CMOS； 毫米波； 硅基传输线； 滤波器； 功率放大器ABSTRACTRecently, with the rapid and wide bandwidth development of wireless communication technology, high transmission rate of millimeter-wave circuits become the development trend of mobile communication systems.Standard CMOS technology feature siz
7、e continues to reduce, the unit current gain frequency and the unit power gain frequency of MOSFET have reached hundred of GHz or even hundreds of GHz, So millimeter-wave RF front end circuits based on standard CMOS process are possible. Accurate model, low quality factor and high loss of passive ar
8、e the bottleneck of CMOS millimeter-wave power amplifier. Other difficulties are low transconductance and breakdown voltage of MOSFET. For the bottlenecks and difficulties of millimeter-wave CMOS power amplifier design, the author give a detailed study of CMOS silicon-based transmission line and des
9、ign a millimeter-wave band-pass filter based on SMIC 0.18um RF-CMOS. Followed, a 24GHz broadband power amplifier based on IBM 90nm RF-CMOS is designed after a detailed study of CMOS power amplifier. The main work of this paper includes:(1) Systematically introduce the basic performance silicon-based
10、 transmission lines, comparative study of several different structures of silicon-based transmission line, comparative analysis of silicon-based transmission line model, a brief discussion of several silicon-based millimeter-wave transmission lines and discontinuities. Focus on research vertical gro
11、und plane coplanar waveguide (VGP CPW) and coplanar waveguide (CPW) based on SMIC 0.18um RF-CMOS technology. The two transmission lines with different structures are studied theoretically, their loss properties characteristic impedance and isolation are analyzed; and a VGP CPW length scalable transm
12、ission line model is established. This filter is designed using low-loss VGP CPW transmission line structure with Z0 = 50, as well as VGP CPW length scalable transmission line model. The on-wafer measurement results that the S-parameter of the filter fit the simulated results well. This work provide
13、s a reasonable way for millimeter wave filter design.(2) To the basic performance indicators, classes of power amplifier, input and output matching structure and Cripps theory, this paper focuses on the challenges will face in design millimeter wave RF power amplifier. Finally, design a fully integr
14、ated 24GHz power amplifier by using the IBM 90nm RF-CMOS process, the chip size is 1.2mm*0.67mm. The circuit consists of two self-biased cascode structure, self-biased cascode structure not only improves the gain, increase reverse isolation, and can effectively alleviate the gate oxide breakdown and
15、 hot carrier effects caused by reliability problems. Class A power amplifier and 2.2V supply voltage, the power amplifier simulation are: the power gain is 17dB, the S11 is less than -12dB, 22GHz-26GHz of 1dB compression point output power is greater than 15dBm, the maximum power added efficiency 14%.In summary, this paper gives a sufficient research on silicon-based transmission line widely used in millimeter-wave circuit. A 30GHz band-pass filter of transmission line is designed successfully, whats more, design a 24GHz
