《半导体技术发展趋势及中芯国际RD》由会员分享，可在线阅读，更多相关《半导体技术发展趋势及中芯国际RD（40页珍藏版）》请在金锄头文库上搜索。
1、SemiconductorTechnologyTrends SMIC sR DtoSupplyManufacturingTechnologies Dr Shiuh WuuLee李序武博士ExecutiveVP TechnologyR D SMICOct23th 2014 2014北京微电子国际研讨会 SafeHarborStatementsUnderthePrivateSecuritiesLitigationReformActof1995 Thisdocumentcontains inadditiontohistoricalinformation forward lookingstatemen
2、ts withinthemeaningofthe safeharbor provisionsoftheU S PrivateSecuritiesLitigationReformActof1995 Theseforward lookingstatementsarebasedonSMIC scurrentassumptions expectationsandprojectionsaboutfutureevents SMICuseswordslike believe anticipate intend estimate expect project andsimilarexpressionstoid
3、entifyforwardlookingstatements althoughnotallforward lookingstatementscontainthesewords Theseforward lookingstatementsarenecessarilyestimatesreflectingthebestjudgmentofSMIC sseniormanagementandinvolvesignificantrisks bothknownandunknown uncertaintiesandotherfactorsthatmaycauseSMIC sactualperformance
4、 financialconditionorresultsofoperationstobemateriallydifferentfromthosesuggestedbytheforward lookingstatementsincluding amongothers risksassociatedwithcyclicalityandmarketconditionsinthesemiconductorindustry intensecompetition timelywaferacceptancebySMIC scustomers timelyintroductionofnewtechnologi
5、es SMIC sabilitytorampnewproductsintovolume supplyanddemandforsemiconductorfoundryservices industryovercapacity shortagesinequipment componentsandrawmaterials availabilityofmanufacturingcapacity financialstabilityinendmarketsandintensiveintellectualpropertylitigationinhightechindustry Inadditiontoth
6、einformationcontainedinthisdocument youshouldalsoconsidertheinformationcontainedinourotherfilingswiththeSEC includingourannualreportonForm20 FfiledwiththeSEConApril14 2014 especiallyinthe RiskFactors sectionandsuchotherdocumentsthatwemayfilewiththeSECorSEHKfromtimetotime includingonForm6 K Otherunkn
7、ownorunpredictablefactorsalsocouldhavematerialadverseeffectsonourfutureresults performanceorachievements Inlightoftheserisks uncertainties assumptionsandfactors theforward lookingeventsdiscussedinthisdocumentmaynotoccur Youarecautionednottoplaceunduerelianceontheseforward lookingstatements whichspea
8、konlyasofthedatestatedor ifnodateisstated asofthedateofthisdocument 2 Outline MajorTechnologyChallengesSMIC sTechnologyR DStrategiesandPlansContinuetobuild enhancehighqualityandinnovativeR DatSMICPlacesignificantfocusonleading edgedifferentiationtechnologiesStrengthenR DonadvancedCMOStechnologyEnric
9、hdesignIPtoactivelysupportdesignhousesforfasterTTMActivelydrivethegrowthindomesticICindustrychain3 ConcludingRemarks 3 国际主流逻辑技术路线图 1H13 2H13 1H14 2H14 1H15 2H15 2H12 1H16 2H16 1H17 2H17 Skip20nmPlanar 14nmFF 16nmFF 14nmFF 14nmFF 14nmFF 22nmFF Speculated 14nmFF Foundry T GF U Samsung Intel 国际主流公司未来五年
10、逻辑技术路线图 各公司均加快了科研进度 多数公司在未来五年均拟推出3代或3代以上技术产品 20nmPlanar 20nmPlanar 10nmFinFET 10nmFinFET 10nmFinFET 10nmFinFET 7nmFinFET 7nmFinFET 7nmFinFET 7nmFinFET Pre manufactureTechnologies ManufactureTechnologies 4 我国集成电路产业技术进步 落后2 3年 摘自 北京大学王阳元 2012 5 光刻技术新材料工艺误差新结构工艺集成 芯片制造技术中的五大技术挑战 6 技术挑战 1 精密图形转换 如何用193纳
11、米波长光源形成65 20纳米特征长度的图形 1 光学修正 OPC 相移掩膜 PhaseShiftMask 2 浸没式光刻 ImmersionLitho 3 多重曝光和刻蚀 MultiplePatterning 7 光刻技术的瓶颈三因素 PhaseShiftMaskOff axisillumination 8 光学修正技术使得图形比波长短 9 DesignRuleofCriticalLayers ContactPLPitch Fin 193nmHappyDays 193nm光刻的瓶颈 193纳米光刻技术支撑CMOS发展65 14nm 10 新材料在CMOS中的应用 本世纪来 47种新材料进入集成
12、电路制造 共计64种材料 12547 技术挑战 2 新材料新工艺 11 新材料技术带来的器件性能提高 0 13um90nm65nm45nm32nm 12 产品技术杀手 工艺随机误差 技术挑战 3 工艺误差 DFM 研究工艺误差带来的器件产品性能变化 并提出解决方案 APC 及时发现工艺异常 13 Directimpact SRAMyieldCircuitperformanceanddesignmarginIndirectimpact ReliabilityMobilityManufacturingcontrol 挑战 在低电压下获得高电流和少泄漏即在低电源电压情况下 低电压可以获得好的功耗指标
13、 要设法获得更大的驱动能力和更小的晶体管延时 提高性能 显然 在传统的体硅平面器件上 已很难实现上述要求 栅泄漏电流 寄生电阻 短沟效应 迁移率退化 波动性 动态功耗 驱动能力 IDSat Cgvinj Cg Vdd Vt eff 功耗 P CgVdd2f IleakageVdd 速度 g CgVdd IDSat 来源 北京大学黎明研究员 体硅平面工艺似乎走到尽头 技术挑战 4 新结构 14 3维晶体管FinFET 新器件的设计问题新一代FinFET器件的结构优化应力分布模拟 迁移率提取 输运机制 可靠性与涨落特性器件结构参数和工艺参数对电路性能的影响可制造性问题栅泄漏电流 功函数调节 源漏串
14、联电阻及接触电阻等关键问题材料体系与工艺技术的稳定性可靠性问题大生产平台上工艺集成问题自对准多次曝光技术 纳米级Fin和Gate的光刻和刻蚀 节距的缩小带来的原子水平的间隙填充 低介电常数侧墙 超低K铜互连等 15 800 1000 1400 65nm 45nm 20nm 65 14纳米CMOS工艺流程复杂度 技术挑战 5 工艺集成技术 每一代新技术需要约20 以上的工艺设备添置和更新几乎每步工艺需要实验 关键工艺需要数百次 1200 32nm 1600 14nm 16 Outline MajorTechnologyChallengesSMIC sTechnologyR DStrategies
15、andPlansContinuetobuild enhancehighqualityandinnovativeR DatSMICPlacesignificantfocusonleading edgedifferentiationtechnologiesStrengthenR DonadvancedCMOStechnologyEnrichdesignIPtoactivelysupportdesignhousesforfasterTTMActivelydrivethegrowthindomesticICindustrychain3 ConcludingRemarks 17 HV0 13 m0 16
16、 m0 20 m0 25 m0 35 m LCOS0 13 m0 18 m0 25 m0 35 m MEMS0 13 m0 18 m 14nm28nm RF MS28nm40nm55nm65nm90nm0 13 m0 18 m SOCplatforms Flash ETOX 38nm45nm65nm90nm0 13 m0 18 m0 25 m e Flash55nm90nm0 11 m0 13 m0 18 m Imager55nmBSI90nmFSI BSI0 11 mBSI0 13 mFSI0 15 mFSI0 18 mFSI EEPROM0 11 m0 13 m0 18 m0 35 m 40nm65 55nm90nm0 11 m0 13 m0 15 m0 18 m0 25 m0 35 mLogicBaseline PMIC0 13 m0 18 m0 35 m SOCplatforms SMIC sTwo ProngedTechnologyStrategy 18 28nmReadinessandMPWMilestones 4Q13OnTimeDelivery Y14NTOYearY1
