《溅射参数对单层AZO和多层AZOCuAZO薄膜性能的影响研究毕业论文》由会员分享，可在线阅读，更多相关《溅射参数对单层AZO和多层AZOCuAZO薄膜性能的影响研究毕业论文（45页珍藏版）》请在金锄头文库上搜索。
1、溅射参数对单层AZO和多层AZO/Cu/AZO薄膜性能的影响研究毕业论文目 录摘 要6Abstract7第一章 绪 论11.1引言11.2 氧化锌的基本性质11.2.1 ZnO的晶体结构21.2.2 ZnO的电学性质和光学特性31.2.3 ZnO的能带结构31.3 ZnO的应用31.3.1透明导电薄膜31.3.2发光器件31.3.3紫外探测管31.4 AZO/Cu/AZO多层透明导电薄膜的研究41.4.1 TCO薄膜的种类41.4.2 AZO/Cu/AZO多层透明导电薄膜的用途41.5 本文主要研究目的和容4第二章 透明导电薄膜的制备和表征手段52.1 主要制备技术52.1.1 磁控溅射技术5
2、2.1.2 真空蒸发技术72.1.3 PLD技术82.1.4 溶胶凝胶技术82.2 主要表征方法92.2.1 表面轮廓仪92.2.2 分光光度计92.2.3 X射线衍射仪102.2.4 四探针方阻仪102.2.5 霍尔测试仪11第三章 单层AZO薄膜测试结果与讨论123.1 引言123.2 实验参数123.3 实验参数对单层AZO薄膜性能的影响133.3.1衬底温度对单层AZO薄膜薄膜性能的影响133.3.2 偏压对AZO薄膜性能的影响163.3.3后续退火对单层AZO薄膜性能的影响193.2本章小结19第四章 AZO/Cu/AZO多层透明导电薄膜测试结果与讨论214.1 引言214.2 实验
3、参数214.3 溅射功率对AZO/Cu/AZO多层透明导电薄膜光电性能的影响224.3.1 溅射功率对AZO/Cu/AZO多层薄膜的光学性能分析224.3.2 溅射功率对AZO/Cu/AZO多层薄膜的结晶性能的影响234.3.3 溅射功率对AZO/Cu/AZO多层薄膜的表面形貌影响254.3.4 溅射功率对AZO/Cu/AZO多层薄膜的电学性能的影响254.4 溅射压强对AZO/Cu/AZO多层薄膜光电性能的影响274.4.1 溅射压强对AZO/Cu/AZO多层薄膜光学性能的影响274.4.2 溅射压强对AZO/Cu/AZO多层薄膜结晶质量的影响284.4.3 溅射压强对AZO/Cu/AZO多
4、层薄膜电学性能的影响304.5 本章小结31第五章 结 论32结束语34致 谢35作者在学术期间取得的学术成果36参考文献37 .专业.专注. 摘 要近年来，ZnO薄膜材料在光电器件领域，获得了广泛的应用。ZnO材料作为一种禁带宽度达到3.3eV的半导体材料，具有晶格结构、光学和电学方面的诸多优点。并且相对于ITO薄膜，ZnO:Al(简称AZO)薄膜的电阻率更低、可见光透过率更高，并且由于原材料储量丰富，价格低廉，制备过程不会产生污染，因此有望在透明导电领域，成为ITO薄膜的替代者。磁控溅射技术，作为众多AZO薄膜制备技术中的一种，具有相对较高的均匀性和沉积速率，被认为是制备AZO薄膜较为理想
5、的制备技术。本文前两章，首先对ZnO和透明导电（TCO）薄膜的性质、结构、及发展现状进行了概括和总结，再对单层AZO薄膜和多层AZO/Cu/AZO薄膜的性能和应用领域进行了介绍，之后又对AZO薄膜的制备方法和表征方式进行了综合描述。在此基础上，本实验采用磁控溅射技术，以纯度3N、2wt%Al2O3掺杂的ZnO陶瓷靶作为溅射靶材，在普通载玻片衬底上制备了单层和多层AZO薄膜样品。之后对所得的样品，采用扫描电子显微镜(SEM)、X射线衍射(XRD)仪、紫外可见光谱仪(UV-Vis)等方法进行了测试分析。着重研究了不同制备参数（包括衬底温度、溅射压强、溅射功率等），对AZO薄膜形貌结构和光电性能的影
6、响。最终得到了以下的结论：通过分析并汇总实验数据，实验验证了：AZO薄膜的晶体结构、表面形貌、及光电性能，受到衬底温度、溅射压强、溅射功率等制备参数的显著影响。实验制备得到的所有AZO薄膜样品，均为多晶的六角纤锌矿结构，呈现c轴（002）晶面择优取向，并且在可见光区围的光透过率较高。对于单层AZO薄膜来说，当溅射偏压为60V，衬底温度达到200时薄膜性能最佳，并且后续退火处理可以显著降低其电阻率。以此为基础，对于多层AZO/Cu/AZO薄膜，当溅射功率达到120W，溅射压强为0.5Pa时薄膜性能达到最佳。最终得出了，在低温区域，磁控溅射技术制备AZO薄膜的优化工艺参数：溅射时间30min、负偏
7、压为60V、衬底温度200时、300氮气退火后，制得的单层AZO薄膜的可见光透过率达到81%，最低电阻率为9.210-4cm；以此为基础，当溅射压强为0.5Pa，溅射功率为120W时，多层AZO/Cu/AZO薄膜的可见光透过率为75%，最低电阻率为7.210-4cm。关键词：ZnO，AZO，磁控溅射，衬底温度，溅射压强，溅射功率 AbstractIn the recent years, ZnO film material is widely used in optoelectronic devices. ZnO as a band gap width to 3.3eV semiconducto
8、r material have advantages in lattice structure, optical and electrical. Because of its low resistivity, higher visible light high transmittance, and its raw material reserves, low price, the preparation process does not produce pollution, ZnO:Al (AZO) thin films maybe replace of the ITO films. Magn
9、etron sputtering technology, one of the AZO thin film preparation technologies, has a relatively high uniformity and deposition rate, is believed to be an ideal preparation technology to preparing AZO film.In the first and second chapters, we first review ZnO films and ITO films structure, propertie
10、s and development situation. Then introduce the single-layer AZO film and mutli-layer AZO/Cu/AZO film properties and application. At last, we descript the AZO thin film preparation and characterization methods.In this experience, single-layer and multi-layer AZO film samples were prepared on common
11、floating glass by magnetron sputtering technique. High purity metallic ZnO: Al2O3 (purity: 99.9 %,Al: 2wt.%) target was used as source materials. After investigating by X-ray diffraction (XRD), Scanning electron micro-scope (SEM) and UV-Visible Spectrophotometer (UV-Vis), we analyze the different pa
12、rameters influence on AZO films structual and optoelectronic properities. The results show as follows: Its verified that substrate temperature, bias-voltage and annealing atmosphere have great effect on lattice structure, optical and electrical properties of AZO films by analyzing the experimental d
13、ata. All the prepared thin film samples are polycrystalline form of wurtzite structure with the preferential orientation of (002) diffraction plane, have well transparency in visible range. When the single-layer AZO film prepared in the condition of bias-voltage 60V and substrate temperature will ha
14、ve the best properties and visibly lower resistivity after annealing in air or N2. While the multi-layer AZO/Cu/AZO film prepared in the condition of the sputtering power 120W and the substrate temperature 250 will have the best properties.The film exhibited average transmittance over 81% in visible
15、 range, the lowest resistivity 9.210-4cm when prepared at the substrate temperature , sputtering time 30 minutes, bias-voltage 60V, annealing temperature 300. While the film light transmittance is 75% and the lowest resistivity is 7.210-4cm when prepared at the sputtering power 120W, the substrate temperature 250, the sputtering pressure 0.5Pa.Key Words：AZO, magnetron sputtering, substrate temperature, sputtering power, sputtering pressure.第一章 绪 论1.1引言半导体（Semiconductor）与半导体技术是现代高级科学技术的核心与先导，对社会的进步
