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1、TK31V60W 1 MOSFETsSilicon N Channel MOS DTMOS TK31V60WTK31V60WTK31V60WTK31V60W Start of commercial production 2013 06 1 1 1 1 ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2 2 2 2 FeaturesFeaturesFeaturesFeatures 1 Low drain source on resistance RDS ON 0 078 typ by us
2、ed to Super Junction Structure DTMOS 2 Easy to control Gate switching 3 Enhancement mode Vth 2 7 to 3 7 V VDS 10 V ID 1 5 mA 3 3 3 3 Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit DFN8x8 1 Gate 2 Source1 3 4 Source2 5 Drain He
3、atsink Notice Please use the source1 pin for gate input signal return Make sure that the main current flows into the source2 pins 4 4 4 4 Absolute Maximum Ratings Note TAbsolute Maximum Ratings Note TAbsolute Maximum Ratings Note TAbsolute Maximum Ratings Note Ta a a a 25 25 25 25 unless otherwise s
4、pecified unless otherwise specified unless otherwise specified unless otherwise specified Characteristics Drain source voltage Gate source voltage Drain current DC Drain current pulsed Power dissipation Single pulse avalanche energy Avalanche current Reverse drain current DC Reverse drain current pu
5、lsed Channel temperature Storage temperature Tc 25 Note 1 Note 1 Note 2 Note 1 Note 1 Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg Rating 600 30 30 8 123 240 338 7 7 30 8 123 150 55 to 150 Unit V A W mJ A Note Using continuously under heavy loads e g the application of high temperature curre
6、nt voltage and the significant change in temperature etc may cause this product to decrease in the reliability significantly even if the operating conditions i e operating temperature current voltage etc are within the absolute maximum ratings Please design the appropriate reliability upon reviewing
7、 the Toshiba Semiconductor Reliability Handbook Handling Precautions Derating Concept and Methods and individual reliability data i e reliability test report and estimated failure rate etc 2014 02 25 Rev 2 0 TK31V60W 2 5 5 5 5 Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsTher
8、mal Characteristics Characteristics Channel to case thermal resistance Symbol Rth ch c Max 0 52 Unit W Note 1 Ensure that the channel temperature does not exceed 150 Note 2 VDD 90 V Tch 25 initial L 10 mH RG 25 IAR 7 7 A Note This transistor is sensitive to electrostatic discharge and should be hand
9、led with care 2014 02 25 Rev 2 0 TK31V60W 3 6 6 6 6 Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics 6 1 6 1 6 1 6 1 Static Characteristics TStatic Characteristics TStatic Characteristics TStatic Characteristics Ta a a a 25 25 25 25 unless othe
10、rwise specified unless otherwise specified unless otherwise specified unless otherwise specified Characteristics Gate leakage current Drain cut off current Drain source breakdown voltage Gate threshold voltage Drain source on resistance Symbol IGSS IDSS V BR DSS Vth RDS ON Test Condition VGS 30 V VD
11、S 0 V VDS 600 V VGS 0 V ID 10 mA VGS 0 V VDS 10 V ID 1 5 mA VGS 10 V ID 15 4 A Min 600 2 7 Typ 0 078 Max 1 10 3 7 0 098 Unit A V 6 2 6 2 6 2 6 2 Dynamic Characteristics TDynamic Characteristics TDynamic Characteristics TDynamic Characteristics Ta a a a 25 25 25 25 unless otherwise specified unless o
12、therwise specified unless otherwise specified unless otherwise specified Characteristics Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time rise time Switching time turn on time Switching time fall time Switching time turn of
13、f time MOSFET dv dt ruggedness Symbol Ciss Crss Coss Co er rg tr ton tf toff dv dt Test Condition VDS 300 V VGS 0 V f 100 kHz VDS 0 to 400 V VGS 0 V VDS OPEN f 1 MHz See Figure 6 2 1 VDD 0 to 400 V ID 7 7 A Min 50 Typ 3000 9 5 70 123 2 32 70 8 5 165 Max Unit pF ns V ns Fig Fig Fig Fig 6 2 16 2 16 2
14、16 2 1Switching Time Test CircuitSwitching Time Test CircuitSwitching Time Test CircuitSwitching Time Test Circuit 6 3 6 3 6 3 6 3 Gate Charge Characteristics TGate Charge Characteristics TGate Charge Characteristics TGate Charge Characteristics Ta a a a 25 25 25 25 unless otherwise specified unless
15、 otherwise specified unless otherwise specified unless otherwise specified Characteristics Total gate charge gate source plus gate drain Gate source charge 1 Gate drain charge Symbol Qg Qgs1 Qgd Test Condition VDD 400 V VGS 10 V ID 30 8 A Min Typ 86 18 41 Max Unit nC 6 4 6 4 6 4 6 4 Source Drain Cha
16、racteristics TSource Drain Characteristics TSource Drain Characteristics TSource Drain Characteristics Ta a a a 25 25 25 25 unless otherwise specified unless otherwise specified unless otherwise specified unless otherwise specified Characteristics Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Diode dv dt ruggedness Symbol VDSF trr Qrr Irr dv dt Test Condition IDR 30 8 A VGS 0 V IDR 15 4 A VGS 0 V dIDR dt 50 A s IDR 15 4 A VGS 0 V VDD 400 V Min
