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1、2002 Fairchild Semiconductor Corporation Rev. B, December 2002IRF630B/IRFS630BIRF630B/IRFS630B200V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar, DMOS technology.This advanced technology has been esp
2、ecially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters foruninterrupted powe
3、r supply and motor control.Features9.0A, 200V, RDS(on)= 0.4 VGS= 10 VLow gate charge ( typical 22 nC)Low Crss ( typical 22 pF)Fast switching100% avalanche testedImproved dv/dt capabilityAbsolute Maximum Ratings TC= 25C unless otherwise noted* Drain current limited by maximum junction temperature.The
4、rmal Characteristics Symbol Parameter IRF630B IRFS630B UnitsVDSSDrain-Source Voltage 200 VIDDrain Current - Continuous (TC= 25C) 9.0 9.0 * A- Continuous (TC= 100C) 5.7 5.7 * AIDMDrain Current - Pulsed (Note 1) 36 36 * AVGSSGate-Source Voltage 30 VEASSingle Pulsed Avalanche Energy (Note 2) 160 mJIARA
5、valanche Current (Note 1) 9.0 AEARRepetitive Avalanche Energy (Note 1) 7.2 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/nsPDPower Dissipation (TC= 25C) 72 38 W- Derate above 25C 0.57 0.3 W/CTJ, TSTGOperating and Storage Temperature Range -55 to +150 CTLMaximum lead temperature for soldering purp
6、oses,1/8 from case for 5 seconds300 CSymbol Parameter IRF630B IRFS630B UnitsRJCThermal Resistance, Junction-to-Case Max. 1.74 3.33 C/WRCSThermal Resistance, Case-to-Sink Typ. 0.5 - C/WRJAThermal Resistance, Junction-to-Ambient Max. 62.5 62.5 C/WTO-220IRF SeriesG SDSDGTO-220FIRFS SeriesG SDRev. B, De
7、cember 2002IRF630B/IRFS630B(Note 4)(Note 4, 5)(Note 4, 5)(Note 4)2002 Fairchild Semiconductor CorporationElectrical Characteristics TC= 25C unless otherwise notedNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 3mH, IAS= 9.0A, VDD= 50V, RG= 25 , Starting TJ= 25C
8、3. ISD 9.0A, di/dt 300A/s, VDD BVDSS, Starting TJ= 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2%5. Essentially independent of operating temperatureSymbol Parameter Test Conditions Min Typ Max UnitsOff CharacteristicsBVDSSDrain-Source Breakdown Voltage VGS= 0 V, ID= 250 A 200 - - VBVDSS/ TJBrea
9、kdown Voltage Temperature Coefficient ID= 250 A, Referenced to 25C - 0.2 - V/CIDSSZero Gate Voltage Drain CurrentVDS= 200 V, VGS= 0 V - - 10 AVDS= 160 V, TC= 125C - - 100 AIGSSFGate-Body Leakage Current, Forward VGS= 30 V, VDS= 0 V - - 100 nAIGSSRGate-Body Leakage Current, Reverse VGS= -30 V, VDS= 0
10、 V - - -100 nAOn Characteristics VGS(th)Gate Threshold Voltage VDS= VGS, ID= 250 A 2.0 - 4.0 VRDS(on)Static Drain-Source On-ResistanceVGS= 10 V, ID= 4.5 A - 0.34 0.4 gFSForward Transconductance VDS= 40 V, ID= 4.5 A - 7.05 - SDynamic CharacteristicsCissInput CapacitanceVDS= 25 V, VGS= 0 V, f = 1.0 MH
11、z- 550 720 pFCossOutput Capacitance - 85 110 pFCrssReverse Transfer Capacitance - 22 29 pFSwitching Characteristics td(on)Turn-On Delay TimeVDD= 100 V, ID= 9.0 A,RG= 25 - 11 30 nstrTurn-On Rise Time - 70 150 nstd(off)Turn-Off Delay Time - 60 130 nstfTurn-Off Fall Time - 65 140 nsQgTotal Gate ChargeV
12、DS= 160 V, ID= 9.0 A,VGS= 10 V - 22 29 nCQgsGate-Source Charge - 3.6 - nCQgdGate-Drain Charge - 10.2 - nCDrain-Source Diode Characteristics and Maximum RatingsISMaximum Continuous Drain-Source Diode Forward Current - - 9.0 AISMMaximum Pulsed Drain-Source Diode Forward Current - - 36 AVSDDrain-Source
13、 Diode Forward Voltage VGS= 0 V, IS= 9.0 A - - 1.5 VtrrReverse Recovery Time VGS= 0 V, IS= 9.0 A,dIF/ dt = 100 A/s - 140 - nsQrrReverse Recovery Charge - 0.87 - CRev. B, December 20022002 Fairchild Semiconductor CorporationIRF630B/IRFS630B0 5 10 15 20 250.00.51.01.52.02.5VGS= 20VVGS= 10V Note : TJ=
14、25RDS(ON),Drain-SourceOn-ResistanceID, Drain Current A24681010-1100101150oC25oC-55oC Notes :1. VDS= 40V2. 250s Pulse TestID,DrainCurrentAVGS, Gate-Source Voltage V0 4 8 12 16 20 24024681012VDS= 100VVDS= 40VVDS= 160V Note : ID= 9.0 AVGS,Gate-Source Voltage VQG, Total Gate Charge nC10-1100101050010001
15、500CossCiss= Cgs+ Cgd(Cds= shorted)Coss= Cds+ CgdCrss= Cgd Notes :1. VGS= 0 V2. f = 1 MHzCrssCissCapacitance pFVDS, Drain-Source Voltage V0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1100101150 Notes :1. VGS= 0V2. 250s Pulse Test25IDR,Reverse Drain CurrentAVSD, Source-Drain voltage VTypical CharacteristicsFigure 5. Capacitance Characteristics Figure 6. Gate Charge CharacteristicsFigure 3. On-Resistance Variation vsDrain Current and Gate VoltageFigure 4. Body Diode Forward Voltage Variation with Source Current and TemperatureFigure 2. Transfer
