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1、中国科学院半导体研究所博士学位论文 1 面向红外 紫外焦平面阵列的读出电路的研究面向红外 紫外焦平面阵列的读出电路的研究 摘摘要要 红外焦平面技术在航天 国防建设中起着非常重要的作用 在工业和民用领域也 有着极其广泛的应用 研发高性能的相关部件已成为集微电子 材料 光学 低温和 硅微机械加工于一体的高科技综合技术的一个研究热点 红外焦平面阵列主要由红外 探测器阵列和读出电路阵列两部分组成 CMOS 读出电路是读出电路的主流方向 也 是红外焦平面阵列技术的一个关键部件 它的性能直接影响红外焦平面阵列的性能 影响红外系统的性能 随着紫外探测器关键技术的突破 面向紫外焦平面阵列的读出 电路也成为目前
2、的研究热点 本论文针对读出电路中的暗电流 温度特性 低功耗 阵列均匀性设计与测试检 验等关键问题进行了详细的分析研究 依据相应的研究成果 针对量子阱红外焦平面 阵列和GaN 基紫外焦平面阵列完成了128 128 读出电路芯片的实验芯片的设计 流 片以及测试分析 论文的创新点和研究成果如下 1 通过在像素级输入电路内引入新型的 撇取 机制 抵消了探测器的暗电 流 保证了读出电路工作在快照模式时仍可以提供较高的输出电压动态范围 2 论文创新了自偏置电流源的 电阻温度补偿 的方法 利用多晶硅电阻与 N 阱电阻不同的温度特性 实现了自偏置低温电流源 使其具有和常温工作相同的 偏置电流 保证了读出电路在
3、低温环境下正常工作 3 在低温工作的 CMOS 电路研究中 从 CMOS 器件物理原理出发 提出了 低 温预测 的方法 对 MOS 器件的关键参数 如 阈值电压 VTH 和迁移率 等 进行低温值预估 由预估值来进行读出电路的模拟电路单元的设计 该方法有效地 解决了常规 CMOS 工艺缺少低温 SPICE 模型的问题 4 使用了亚阈值跨阻放大器技术对输入电路进行低功耗设计 同时在系统层 引入了功耗管理机制 实现了读出电路的低功耗优化 经过优化 读出电路的功耗 从 300mW 降至 50mW 5 提出内建电注入的方法实现读出电路封装前的功能测试和非均匀性测试 面向红外 紫外焦平面阵列的读出电路的研
4、究 2 基于该方法完成了 128 128 红外读出电路单元电路和阵列的测试 证明了方法的 有效性 6 基于 GaN 基紫外探测器的电学特性 论文提出采用低泄漏电流直接注入电 路作为单元输入电路以实现对紫外探测器 pA 级微弱光电流的读出 论文的实验验证工作中使用了特许半导体0 35um CMOS 混合信号工艺 设计了两 款128 128 读出电路 一款电路面向QWIP 的红外读出电路 当工作在低温环境 77K 时 其转换增益可达1 107 输出电压摆幅为 0 8V 动态范围可达 76dB 功耗小于 60mW 另一款电路面向 GaN 的紫外读出电路 转换增益可达 8 1010 输出电压摆幅为 1
5、V 功耗小于 50mW 测试结果表明 论文的分析结论是 正确的 所设计的读出电路在常温和低温下具有较好的性能 可广泛应用于红外和紫 外焦平面阵列 关关键键词词 量量子子阱阱红红外外焦焦平平面面阵阵列列 C CM MO OS S 读读出出电电路路 G Ga aN N 紫紫外外焦焦平平面面阵阵列列 低低温温 内内建建 电电注注入入 低低泄泄漏漏电电流流 非非均均匀匀性性 中国科学院半导体研究所博士学位论文 3 Research on Readout Circuits Applied for Infrared and Ultraviolet Focal Plane Array Abstract Mo
6、dern infrared IR focal plane arrays FPA technology has played an important role in aerospace industry and national defense and can be widely applied in industry and civil fields Developing high performance FPAs has become a research focus of advanced comprehensive technology including IR material op
7、tics cryogenics solid state micromachining technique microelectronics and so on IR FPA is mainly made up of two parts detector and readout circuit ROC CMOS ROIC is becoming a main developing direction of ROIC ROIC is one of core components in IRFPA The performances of IR FPA even of IR system are di
8、rectly affected by ROIC With the development of Ultraviolet UV photodetector ROICs applied for UV FPA are also drawn attention Based on the detailed analysis and research of the ROIC s key points such as dark current low temperature performance low power dissipation non uniformity and measurement et
9、 al the design chip implementation and measurements of ROICs for quantum well infrared photodetector QWIP FPA and GaN UV FPA respectively are accomplished by introducing the corresponding research innovation The innovative points and the research achievements are as follow 1 A novel skimming mechani
10、sm was introduced at input circuits in pixel level in order to suppress the dark current which would provide high dynamic range of output voltage when ROIC operating at snap shot mode 2 An innovative resistor temperature compensation method which smartly making use of the different temperature depen
11、dency of poly resistor and nwell resistor was suggested for cryogenic self biased current source in this article To assuring the stable performance the cryogenic self biased current source can provide same bias current when working at both room temperature and cryogenic temperature 3 Based on the ph
12、ysics principle of CMOS device the cryogenic characteristics estimation method was proposed for design of cryogenic This method estimated the variation of the MOSFET s critical parameters such as threshold voltage Vth and carrier mobility and then using the new parameters to design the analog module
13、 of the ROIC In this way the lack of cryogenic spice model is no longer the bottle neck of the design of 面向红外 紫外焦平面阵列的读出电路的研究 4 cryogenic ROIC using general CMOS technology 4 Low power optimization is achieved by utilizing the subthreshold transimpedance amplifier at pixel level and introducing the
14、power management mechanism at system level The power dissipation of the whole ROIC is decreased from 300mW to 50mW after optimization 5 The method of built in electronic injection is proposed to test the non uniformity of ROIC before assembling to FPA By measuring a 128x128 ROIC for IR FPA fabricate
15、d in 0 35um CMOS process the method is verified to be effective 6 On the analysis of electronic characteristic of GaN UV detector the ultra low leakage switches are employed into the input circuits of ROIC to realize the readout of pico ampere photo current of UV detector By using the chartered 0 35
16、um mixed signal CMOS two types of 128 128 experimental ROIC were fabricated and verified in this dissertation One of them was applied for QWIP IR FPA When operating at 77K environment the chip had 1 107 transfer gain 0 8V output voltage swing 76dB dynamic range and less than 60mW power dissipation The other was applied for GaN UV FPA and has 8 1010 transfer gain 1V output voltage swing and less than 50mW power dissipation The test results had proved the methodology in this dissertation feasible
