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1、 IC工艺技术系列讲座第二讲 PHOTOLITHOGRAPHY光刻 讲座提要 1 General2 Facility 动力环境 3 Mask 掩膜版 4 Processstephighlight 光刻工艺概述 5 BCD正胶工艺6 Historyand未来的光刻工艺 1 General MASKINGProcess 光刻工艺 Photolithography 光学光刻 Transferatemporarypattern resist DefectcontrolCriticaldimensioncontrolAlignmentaccuracyCrosssectionprofileEtch 腐蚀
2、Transferapermanentpattern Oxide Nitride Metal 2 0Facilityrequirement Temperature 温度 70oFHumidity 湿度 45 Positivepressure 正压 0 02in H2OParticlecontrol 微粒 Class100Vibration 震动 Yellowlightenvironment 黄光区 DIwater 去离子水 17mhomCompressairandNitrogen 加压空气 氮气 Inhousevacuum 真空管道 3 0Mask 掩膜版 DesignPGtapeMaskmak
3、ingPlate quartz LEglass SodalineglassCoating Chrome Ionoxide EmulsionEquipment E beam PatterngeneratorMaskstorage AntistaticBox Pellicle Pellicleprotection 4 0光刻工艺概述 PrebakeandHMDS 前烘 Resistcoating 涂胶 EBR 去胶边 softbake 3 Exposure 曝光 Alignment 校正 4 Develop 显影 Poste bake Hardbake backsiderinse5 Develop
4、inspection 显检 4 1PrebakeandHMDStreatment PurposeofPre bakeandHMDStreatmentistoimprovetheresistadhesiononoxidewafer HMDSisadhesionpromoterespeciallydesignedforpositiveresist HMDS Hexamethyldisilane canbeappliedonthewafersby1 Vaporinabucket2 vaporinavacuumbox3 Directlydispenseonwafer4 YESsystem inahot
5、vacuumsystem5 Vaporinahotplate withexhaust ToomuchHMDSwillcausepoorspin viceversawillcauseresistlifting 4 2ResistCoating 涂胶 Resistcoatingspecification 指标 Thickness 厚度 0 7u 2 0u 3 0以上forPadlayer Uniformity 均匀度 50A 200ASizeofEBR 去胶边尺寸 Particle 颗粒 20perwaferBacksidecontamination 背后污染 三个主要因数影响涂胶的结果Resis
6、tProduct 产品 Viscosity 粘度 SpinnerDispensemethod 涂胶方法 Spinnerspeed RPM 转速 Exhaust 排气 Softbaketemperature 烘温 FacilityTemperature 室温 Humility 湿度 4 2 1Coater 涂胶机 EquipmentmoduleandspecialfeaturePre bakeandHMDS Hot ColdplateResistdispense ResistpumpRPMaccuracy MotorEBR Top bottomHotplate softbaketemperatu
7、reaccuracyExhaustWastecollectionTemperature HumiditycontrolhoodTransfersystem ParticleandreliabilityProcessstepandprocessprogram Flexible SVG8800 升降机 涂胶 HMDS 热板 冷板 升降机 升降机 升降机 涂胶 热板 热板 升降机 升降机 升降机 升降机 涂胶 热板 冷板 HMDS 冷板 冷板 冷板 涂胶 热板 热板 升降机 升降机 显影 热板 热板 热板 冷板 4 2 2Coater 涂胶机 combination 4 2 3Coater 涂胶机
8、ResistdispensemethodsStaticDynamicRadialReverseradialResistpump Volumecontrol 2cc waferanddripping Barrelpump TritekDiaphragmpump MilliporeN2pressurecontrolpump IDLStepmotorcontrolpump Cybotsizeofdispensehead 4 2 4Coater 涂胶机 rpm 转速 andacceleration 加速 Maximumspeed Upto10000rpmStability daytodayAccele
9、ration controllablenumberofstepsReliability timetoreplacementEBR Edgebeadremoval 清边 Method TopEBRorBottomEBRorTopandbottomEBRProblem DrippingChemical Acetone EGMEA PGMEA ETHLY LACTATE ResistType NegativeresistPositiveresistG linei linereverseimageTAC topanti reflectivecoatingBARLI bottomanti reflect
10、ivecoatingChemicalamplificationresistXrayresist 4 3 1Exposure 曝光 Transferapatternfromthemask reticle toresistGoal1 CriticalDimensioncontrol CD 条宽2 Alignment校准 Mis alignment runin out3 Patterndistortion图样变形 Astigmatism4 Crosssectionprofile侧面形貌 sidewallangle5 Defectfree无缺陷Equipment mask resistselectio
11、n1 Resolution分辨率 Exposecharacter Lightsource wavelength N A 2 Auto alignmentskill自动校准技术 Lightfield darkfield laser3 Mask掩膜版 e beammaster sub master spotsize quartzplate defectdensity CDrequirement4 Resistselection胶选择 4 3 2Exposure 曝光 AlignerTechnology1 Contactprint 接触 Softcontact hardcontact proximi
12、ty2 Scanner 扫描 3 Stepper 重复 1X 2X 4X 5X 10X4 Step Scan 重复扫描 4X reticlemove wafermove reticle wafermove5 Xray X光 1 16 E beam 电子束 Directwrite 4 3 3Exposure 曝光 Contactprint 接触 1 Mostofusefornegativeresistprocess for5uprocessandcanbepushto3u 2 Positiveresistcanprintsmallerthan3u anddeepUVcanpushto1u but
13、veryhighdefect3 Equipment CanonPLA501 Cobilt Kasper K S Contactprint Canon501 4 3 4Exposure 曝光 Scanner 扫描 1 MostofuseforG linePositiveresistprocess for3uprocessandcanbepushto2u 2 Negativeresistcanprintsmallerthan4u3 Equipment CanonMPA500 600 PerkinElmer100 200 300 600 700 900 PE240Scanner Canon600Sc
14、anner 4 3 5Exposure 曝光 Stepper 重复 1 Glinepositiveresist for 0 8uprocess2 ilinepositiveresist 0 5uprocess3 ilineresistplusphase shiftmask canbepushedto0 354 deepUVresistprocess 0 35uandbelow5 Equipment Ultratech Canon Nikon ASML 4 3 6Exposure 曝光 6 ASMLStepperlistModelWavelengthResolutionASML2500g0 8A
15、SML5000ASML5500 20 22 25 60 60B 80 80Bi0 55ASML5500 100 100C 100D 150i0 45ASML5000 200 200B 250 250BUV0 35ASML5500 300 300B C D TFHUV0 25ASML5500 900Step ScanUV 4 4 1Develop 显影 Developprocess1 Postexposebake2 ResistDevelop3 DIwaterrinse4 HardBakeDevelopequipment1 Batchdevelop2 TrackdevelopDevelopche
16、mical1 KOH2 Metalfree TMAH Tetramethylamoniahydroxide3 Wettingagent with without4 Concentration 2 38 TMAHTrackdevelopmethod1 Spray2 Steam3 Signal Paddle4 Double Paddle 4 4 2Develop 显影 DevelopTrack1 TemperaturecontrolwaterjacketforDevelopline2 Developpump developpressurecanister3 Exhaust4 Hotplatetemperaturecontrol5 Pre wet processprogram 4 4 3Develop 显影 CDcontrolindeveloping1 Postbakeprocess2 DevelopTime3 Concentrationofdeveloperchemical Higherfast 4 Developertemperature lowerfaster 1oC 0 1u 5 D
