《快速充电IC-HL7005EN资料》由会员分享，可在线阅读，更多相关《快速充电IC-HL7005EN资料（29页珍藏版）》请在金锄头文库上搜索。
1、HL7005 DS7005 V1 2 Mar 20151 29 1 5A Li ion Battery Switching Charger with OTG Boost Integrated Features Full automatic and efficient charge management for large capacity lithium battery Automatic conditioning CC CV charge control termination and recharge 550 1500mA programmable Charge Current 3MHz
2、Synchronous PWM 1 H low profile inductor Input Current Regulation Accuracy 5 100mA and 500mA Charge Voltage Regulation Accuracy 1 20V Input Voltage Tolerance 5 9V Max Operating Voltage Input Voltage Based Dynamic Power Management VIN DPM Optional 32s 30 minutes Safety Timer with Reset Control Power
3、up without battery Automatic Adaptor Fault detection Highimpedancemodewithlowpower consumption Comprehensive Protection Reverse battery leakage protection Thermal regulation and shut down Input 1 charge is disabled and high impedance mode from VUSB to GND D4OTGI Boost mode enable control or selectio
4、n pin for input current limit 1 When OTG mode is in active OTG enables IC to operate in boost mode It has higher priority over I2C control and can be disabled using the control register 2 After POR without a host OTG is used to select input current limit The input current and threshold set by I2C re
5、gister is not used When OTG 1 IIN LIMIT 500mA when OTG 0 IIN LIMIT 100mA Halo Micro Confidential for Coolpad Halo Micro Confidential for Coolpad HL7005 DS7005 V1 2 Mar 20155 29 Internal Functional Block Diagram Figure 4 HL7005 Internal Functional Block Diagram Absolute Maximum RatingsNote1 VUSBpin v
6、oltage 1V 20V VPRT BOOT pin voltage 0 3V 20V SW pin voltage 0 3V 16V other pin voltage 0 3V 5 5V IC power PD 25 1 17W Junction to ambient thermal resistance JA 85 W Junction to case thermal resistance JC 25 W Junction temperature TJ 40 125 Storage temperature Tstg 65 150 Pin soldering temperature Ts
7、 10s 260 ESD HBM 2kV ESD CDM 2kV Halo Micro Confidential for Coolpad Halo Micro Confidential for Coolpad HL7005 DS7005 V1 2 Mar 20156 29 Recommended Operating ConditionsNote2 VUSB VPRT SW pin Voltage 4 3V 5 5V Operating free air temperature TA 30 85 Junction temperature TJ 30 120 Note 1 Stress beyon
8、d those listed under absolute maximum ratings may cause permanent damage to the device 2 Functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied exposure to absolute maximum rated conditions of extended periods
9、may affect device reliability All voltage values are with respect the normal operation ambient temperature range is from 30 to 85 Unless otherwise noted Halo Micro Confidential for Coolpad Halo Micro Confidential for Coolpad HL7005 DS7005 V1 2 Mar 20157 29 Electrical Specifications Electrical specif
10、ications of Charge and OTG boost function VUSB 5 V HZ MODE 0 OPA MODE 0 CDIS 0 TA 40 C to 125 C And TA 25 C Unless Otherwise Noted Table 3 Electrical Specifications ParameterTest Conditionmintypemaxunit Input Current IUSBVUSBcurrent control VUSB VUSB min PWM work10 mA VUSB VUSB min PWM Stop5 0 C TA
11、85 C CD 1or HZ MODE 1 850 A Ilgk batteryleakageto VUSB 0 C TA 85 C VICSN 4 2V InHigh Zmode VUSB 0V Test VUSBcurrent 5 A InHigh Zmode batterydischarge current input from Pin ICSN ICSP therefore the charging process will be faster than the traditional linear charge scheme In HL7005 input voltage limit
12、 threshold of the dynamic power management DPM loop input current charge current termination current and termination voltage etc can all be set by the I2C interface Figure 18 a Typical charging curve without input current limit Figure 18 b Charging curve with input current limit Halo Micro Confident
13、ial for Coolpad Halo Micro Confidential for Coolpad HL7005 DS7005 V1 2 Mar 201516 29 PWM Controller in Charge Mode HL7005 provides a highly efficient synchronous 3MHz PWM controller to regulate the charging current and voltage Power MOSFETS are also integrated Its duty cycle ranges from 0 to 95 HL70
14、05 has three NMOS power MOSFET input reverse blocking FET Q1 high side FET QU and low side FET QD When VUSB is lower than VICSN Q1 prevents battery from discharging to VUSB A charge pump circuit is used to provide gate drive for Q1 while a bootstrap circuit with an external bootstrap capacitor is us
15、ed to supply the gate drive of Q2 Cycle by cycle CBC current limit is implemented in QU for safe operation and output short circuit protection Battery Charge Process When the battery voltage is lower than V SHORT threshold the IC provides a trickle current I SHORT to the battery When the battery vol
16、tage rises to between VSHORTand VOREG The charger enters CC phase by increasing charge current to quick charge current IOCHARGE or a value matching the input current limit IIN LIMif that threshold is reached Built in soft start scheme slowly increases the quick charge current to its target value to minimize current and voltage overshoot on the battery Both the input current limit IIN LIMITand quick charge current IOCHARGEcan be set by the host Once the battery voltage reaches the regulation volt
