《2PN7103V31 EN(代换IR2103的半桥驱动器)》由会员分享，可在线阅读，更多相关《2PN7103V31 EN(代换IR2103的半桥驱动器)（14页珍藏版）》请在金锄头文库上搜索。
1、PN7103 Half Bridge Driver Patent Pending General Description The PN7103 is a high voltage high speed power MOSFET and IGBT driver based on P SUB P EPI process The floating channel driver can be used to drive two N channel power MOSFET or IGBT in a half bridge configuration which operates up to 600 V
2、 Logic inputs are compatible with standard CMOS or LSTTL output down to 3 3V logic The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction Propagation delays are matched to simplify use in high frequency applications FeaturesPackages Order informatio
3、n Fully operational to 600 V 3 3 V logic compatible dV dt Immunity 50 V nsec Floating channel designed for bootstrap operation Gate drive supply range from 10 V to 20 V UVLO for low side channel Output Source Sink Current Capability 300 mA 600mA 5V negative Vs ability Matched propagation delay for b
4、oth channels Patent Pending Applications Small and medium power motor driver Power MOSFET or IGBT driver Half Bridge Power Converters Full Bridge Power Converters Typical Application Circuit 1 14August 18 2015Version 3 1 Part numberOrder CodePackage PN7103PN7103SEC R1SOIC8 PN7103PN7103DEC R1DFN8 PN7
5、103 Pin Description Functional Block Diagram 2 14August 18 2015Version 3 1 PIN NO PIN NAME PIN FUNCTION 1 VCC Low side and main power supply 2HINLogic input for high side gate driver output HO 3LINLogic input for low side gate driver output LO 4COMGround 5LOLow side gate drive output out of phase wi
6、th LIN 6VSHigh side floating supply return or bootstrap return 7HOHigh side gate drive output in phase with HIN 8VBHigh side floating supply PN7103 Absolute Maximum Ratings Note1 Note 1 Exceeding these ratings may damage the device Recommended Operating Conditions Dynamic Electrical Characteristics
7、VBIAS VCC VBS 15V CL 1000 pF and TA 25 C unless otherwise specified 3 14August 18 2015Version 3 1 SymbolDefinitionTYP MAX Units tonH High side turn on propagationdelay630820 ns toffH High side turn off propagation delay140220 tonL Low side turn on propagation delay630820 toffL Low side turn off prop
8、agationdelay140220 MTDelay matching 50 DTDead time500650 trTurn on rise time60120 tfTurn off fall time3590 SymbolDefinitionMIN MAX Units VB High side floating supply VS 10VS 20 V VS High side floating supply return 600 VHO High side gate drive output voltage VSVB VCC Low side supply 1020 VLO Low sid
9、e gate drive output voltage 0VCC VIN Logic input voltage HIN LIN 0VCC TA Ambient temperature 40125 SymbolDefinitionMIN MAX Units VBHigh side floating supply 0 3622 V VSHigh side floating supply returnVB 22VB 0 3 VHO High side gate drive outputVS 0 3VB 0 3 VCC Low side and main power supply 0 322 VLO
10、 Low side gate drive output 0 3VCC 0 3 VIN Logic input of HIN LIN 0 3VCC 0 3 dVS dtAllowable Offset Supply Voltage Transient 50V ns ESD HBM Model2 5kV Machine Model200V PDPackage Power Dissipation TA 25 C8 Lead SOIC 0 625W RthJAThermalResistance Junction to Ambient8 Lead SOIC 200 C W TJJunction Temp
11、erature 150 C TSStorage Temperature 55150 TLLead Temperature Soldering 10 seconds 300 PN7103 Static Electrical Characteristics VBIAS VCC VBS 15V CL 1000 pF and TA 25 C unless otherwise specified Logic Function Timing Spec 4 14August 18 2015Version 3 1 SymbolDefinitionMIN TYP MAX Units VIH Logic 1 HI
12、N Logic 0 LIN input voltage2 5 V VIL Logic 0 HIN Logic 1 LIN input voltage 0 8 VOHHigh level output voltage VBIAS VO 0 1 VOL Low level output voltage VO 0 1 IQCCQuiescent VCCsupply current 150270 A IQBSQuiescentVBsupply current 3055 ILKLeakage current from VS 600V to GND 10 IIN Logic 1 input bias cu
13、rrent HIN 1 LIN 0 610 IIN Logic 0 input bias current HIN 0 LIN 1 1 VCCU VCCsupply UVLO threshold 8 7 V VCCU 8 IO Output high short circuit pulsed current 300 mA IO Output low short circuit pulsed current 600 PN7103 Characterization Curves 14001400 12001200 10001000 800800 600600 400400 200200 00 50
14、250255075100125 101214161820 Supply Voltage V Temperature Fig 1 Turn On Delay vs TemperatureFig 2 Turn On Delay vs Supply Voltage 1000500 800400 600300 400200 200100 00 2468101214161820 50 250255075100125 Temperature Input Voltage V Fig 3 Turn On Delay Time vs Input VoltageFig 4 Turn Off Delay Time
15、vs Temperature 400500 400 300 300 200 200 100 100 00 1012141618202468101214161820 Supply Voltage V Input Voltage V Fig 5 Turn Off Delay Time vs Supply VoltageFig 6 Turn Off Delay Time vs Input Voltage 5 14August 18 2015Version 3 1 Tu rn On De lay Ti me ns Tu rn On De lay Ti me ns Tu rn Off De lay Ti
16、 me ns Tu rn On De lay Ti me ns Tu rn Off De lay Ti me ns Tu rn Off De lay Ti me ns Max Typ Max Typ Max Typ Max Typ Max Typ Max Typ PN7103 500500 400400 300300 200200 100100 00 50 250255075100125101214161820 Temperature Supply Voltage V Fig 7 Turn On Rise Time vs TemperatureFig 8 Turn On Rise Time vs Supply Voltage 200 200 150 150 100 100 5050 Typ 00 50 250255075100125101214161820 Temperature Supply Voltage V Fig 9 Turn Off Fall Time vs TemperatureFig 10 Turn Off Fall Time vs Supply Voltage 1400
