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1、湖南大学 硕士学位论文 AlN陶瓷表面单层Cu基金属化薄膜研究 姓名：陈道瑞 申请学位级别：硕士 专业：材料物理与化学 指导教师：周灵平 2010-04 硕士学位论文 II 摘 要 AlN陶瓷具有高的热导率、热膨胀系数与硅等半导体材料相匹配、优异的电 学性能及机械性能、无毒等优点，是一种理想的电子封装材料，在电子封装领域 有广泛的应用，但其作为封装材料使用时必须对表面进行金属化处理。常规的薄 膜金属化常采用多层膜技术，会增加膜层间的界面热阻。本文采用离子束辅助磁 控溅射方法在AlN表面制备了单层金属化薄膜，研究了制备工艺和薄膜成分对薄 膜粘结强度、残余应力、电阻率的影响规律，并利用有限元方法对
2、薄膜热应力分 布进行了模拟。 采用磁控溅射法在 AlN 衬底上沉积了单层 Cu 薄膜，双靶磁控溅射工艺制备 的薄膜均匀性较好，单靶磁控溅射工艺制备薄膜的沉积速率较大。沉积温度较高 时，薄膜容易形成晶态结构，结合强度较高。薄膜应力为张应力，且随沉积温度 的升高先增大后减小，在 200左右出现极大值，采用中能离子束辅助轰击方法 形成过渡界面可以减小薄膜应力。 采用离子束辅助沉积和电子束蒸发沉积的方法在 AlN 衬底上沉积了 Ni-Cu 薄 膜，Ni-Cu 形成了固溶体。离子束溅射制备的 Ni-Cu 薄膜质量较好，且沉积温度 越高，薄膜质量越好。随着 Ni 含量的增加，薄膜表面形貌变化很大，晶粒尺寸
3、增 大，结构由致密变疏松，更有明显的缺陷形成。薄膜应力为张应力，且沉积温度 越高，薄膜应力越小。电阻率随着 Ni 含量的增加先上升后下降，在 Ni 含量为 60at%左右，电阻率达到最大值。 利用有限元方法对 AlN 表面金属化薄膜的热应力分布进行了模拟。Cu 薄膜 和 Ni-Cu 薄膜的热应力都表现为张应力，最大薄膜热应力主要集中在薄膜的中间 部分，在基体的中间部分，应力达到最小值。沉积温度越高，薄膜热应力越大； 随着薄膜厚度的增加，薄膜的最大热应力呈现减小趋势，而最小热应力呈现增大 的趋势；封装材料用于器件中的工作温度越高，薄膜热应力越小。 关键词：AlN；薄膜金属化；薄膜金属化；Cu 薄
4、膜；薄膜应力；薄膜；薄膜应力；Ni-Cu 薄膜；有限元方法薄膜；有限元方法 AlN 陶瓷表面单层 Cu 基金属化薄膜研究 III Abstract Aluminum nitride ceramic is an ideal electronic packaging material due to a unique combination of properties including high theoretical thermal conductivity, thermal expansion coefficient which is close to the silicon, high el
5、ectrical properties and mechanical properties, innocuity. In practical application of AlN, AlN ceramic surface must be metallized. Multi-layer film technology is conventional way for synthesizing thin-film metallization, but it may increase the interface thermal resistance. In this paper, thin films
6、 metallization on AlN substrates were obtained with ion beam and magnetron sputtering method. Influences of preparation process and flim composition which affected adhesive strength, residual stress and resistivity of the films were researched. Additionally, the distribution of thermal stress was an
7、alyzed by finite element analysis method. Copper film was deposited on the surface of AlN substrate by magnetron sputtering method. In this process, uniformity of film which was deposited by dual targets magnetron sputtering has much better properties, whereas the higher depositon rate will be got w
8、ith single target magnetron sputtering method. Moreover, Cu film had much better qualities such as well crystallization and adhesive strength as the higher deposition temperature was used. The residual stress in Cu film was tensile stresses, which increased firstly and then decreased with the increa
9、sing of the deposition temperature, the stress reached the peak value when the deposition temperature was 200. The stress of surface metallization Cu film on AlN substrate can be reduced by implantation of transition interface on AlN substrates Ni-Cu films were obtained by using ion-beam assisted de
10、position and electron beam evaporation deposition method. It was found that, as the proportion of components changed, the replacement or interstitial solid solution wound be formed. Ni-Cu films which are deposited by ion-beam assisted deposition had much better qualities than others, and the higher
11、tempereture is used the better qualities it will get. As the Ni content increasing, the morphology of the film changed greatly that the crystal grain in the film graw up, and the film turned to be looser. At the same time, a lot of defects came out. The residual stresses in Ni-Cu film are tensile st
12、resses, which increased following the increasing of deposition temperature. The resistance of Ni-Cu films increased at first then decreased with the increasing of Ni, and the stress reached 硕士学位论文 IV the peak value when the content of Ni turns to 60at%. Thermal stress of surface film metallization o
13、n AlN substrate was analyzed by finite element analysis method. The thermal stresses of Cu film and Ni-Cu film are tensile stresses. The maximum thermal stress of the film mainly goes into effect at the center of the film, and the stress reaches the lowest value at the center of the matrix. The high
14、er the deposition temperature is, the greater the thermal stress of the film will be. Following with the increasing of the film thickness, the maximum thermal stress will decrease and the minimum thermal stress tends to increase. With the pakaging materials applied in the devices, the higher operati
15、ng temperature which the smaller the film thermal stress will be. Key Words: Aluminum nitride; Cu film; stress; Ni-Cu film; finite element method 硕士学位论文 VIII 插图索引 图 1.1 AlN 的晶体结构示意图.3 图 1.2 薄膜受到压应力和张应力示意图12 图 2.1 薄膜沉积设备系统示意图16 图 3.1 台阶仪测试样品厚度位置示意图21 图 3.2 不同沉积温度下制备的 A1N 表面金属化 Cu 薄膜 XRD 图谱.22 图 3.3 不
16、同沉积温度下制备 A1N 表面铜薄膜的 SEM 照片.23 图 3.4 沉积温度对铜薄膜应力的影响24 图 3.5 AlN 表面金属化 Cu 薄膜结构示意图.27 图 3.6 不同沉积温度下 AlN 表面铜膜划痕形貌28 图 3.7 AlN 表面金属化 Cu 薄膜的电阻率随沉积温度的变化曲29 图 4.1 不同束流条件下沉积 Ni-Cu 薄膜 EDS 图谱.33 图 4.2 Ni-Cu 薄膜中含 Ni 量随溅射束流比 INi/ICu的变化曲线.33 图 4.3 不同成分的 Ni-Cu 薄膜 XRD 衍射图谱34 图 4.4 不同沉积温度的 Ni-Cu 薄膜 XRD 图谱35 图 4.5 制备工艺对 Ni-Cu 薄膜表面形貌的影响.35 图 4.6 合金成分对 Ni-Cu 薄膜
