《表面光伏谱在光电材料与器件研究中的应用 周紫光》由会员分享，可在线阅读，更多相关《表面光伏谱在光电材料与器件研究中的应用 周紫光（6页珍藏版）》请在金锄头文库上搜索。
1、V;q周紫光, 刘爱民, 刘维峰, 刘艳红(大连理工大学物理与光电工程学院, 辽宁大连 116024)K1:利用表面光伏谱可测光电材料的禁带宽度、导电类型、表面态能级和少数载流子扩散长度等。分析了表面光伏技术的非破坏性、快速和高灵敏度等方面的优点, 指出它可以在一个合适的温度范围内对任何环境下的任何半导体材料进行测量分析。研究表明, 随着激光光源的应用、微弱信号检测水平的提高和计算机技术的发展, 表面光伏技术的测量精度越来越高, 可更加准确地分析半导体的能级结构和电子跃迁转移现象, 因此必然会在光电材料与器件的研究中得到更为方泛的应用。1oM:表面光伏谱;光电材料;太阳能电池ms|:TN304
2、DSM:A cI|:1003-353X (2009)07-0679-05Application of the Surface Photovoltage Spectroscope in thePhotovoltaic Material and DevicesZhou Ziguang, Liu Aimin, Liu Weifeng , Liu Yanhong(School of Physics and Optoelectronic, Dalian University of Technology, Dalian 116024, China)Abstract:Surface photovoltage
3、 spectroscope (SPS)can be used for measuring the properties of thephotovoltaic material, such as bandgap, conductive type , surface states, minority carrier diffusion lengthand so on .SPS technique has the advantages of non-destructive , quick and high sensitivity .It is pointed outthat measurements
4、 using SPS can be performed at any reasonable temperature , on any semiconductingmaterial, at any ambient.It shows that with the application of laser source, the improvement of weak signalmeasurement and the development of computer technique, SPS technique may be more precise and moresuitable for th
5、e analysis of band diagram and electron transition.So SPS technique will be more wildly used inthe field of photovoltaic material and devices.Key words:SPS ;photovoltaic material;solar cellsEEACC:4220;41100引言V;8B1km,ZEYVV;3Ms;+。V;S20W40M, W .H .Brattain 1n5PZE8V(1,d08V%MC。20W70M, H.C .Gatos 2d?z;vVY
6、,z#8s$。20W70M80M,V;。=, MISEkHW1,7O.1?917:Ez,l|Hq/LSPVd1。1+Yi, SPVE0G$,T(4),yBL!$,L=fL!,18si f% 17 。3结语V;BV;q+rZE。SPSk(d,P;q、z、V?)#0ZVC。yN, SPSA|;q.-VB8;Z J .8/,2008,33(8):649-653. 9!,.AV/1 J .8/, 2006,31(8):506-508. 10 LEIBOVITCH M, KRONIK L, FEFER E, et al.Surfacephotovoltage spectroscopy of thin f
7、ilms J .JAP, 1996, 79(11):8549-8556. 11 LEIBOVITCH M ,KRONIK L,MISHORI B,et al.Determiningband offsets using surface photovoltage spectroscopy :the InP/InGaAs heterojunction J .APL,1996,69(17):2587-2589. 12 BACHRACH-ASHKENASY N, KRONIK L, SHAPIRA Y, etal.Surface photovoltage spectroscopy of quantum
8、wells andsuperlattices J .APL, 1996,68(7):879-881. 13 AIGOUI L,POLLAK F H.Observation of excitonic features inZnSe/ZnMgSSe multiple quantum wells by normalized Kelvinprobe spectroscopy at low temperatures J .Solid StateCommun,1997, 102(12):877-882. 14 KRONIK L,MISHORI B,FEFER E, et al.Quality contro
9、l andcharacterization of Cu(In,Ga)Se2-based thin-film solar cellsby surface photovoltage spectroscopy J .Sol Energy MaterSol Cells, 1998,51(1):21-34. 15 MISHORI B, LEIBOVITCH M, SHAPIRA Y, et al.Surfacephotovoltage spectroscopy of a GaAs/ AlGaAs heterojunctionbipolar transistor J .APL,1998,73(5):650
10、-652. 16 HUANG Y S, MALIKOVA L, POLLAK F H, et al.Surfacephotovoltage spectroscopy, photoreflectance, and reflectivitycharacterization of an InGaAs/GaAs/GaAlAs vertical-cavitysurface-emitting laser including temperature dependence J .APL,2000,77(1):37-39. 17 LEERO K, YORAM S.Surface photovoltage spe
11、ctroscopy ofsemiconductor structures:the crossroads of physics, chemistryand electrical engineering J .Surf Interface Anal, 2001, 31(1):954-965.(/714:)周紫光等:表面光伏谱在光电材料与器件研究中的应用July2009 Semiconductor Technology Vol.34 No.7 683ID: 1 RANDALL W R .HF filter design and computer simulation M .SciTech Publi
12、shing,Copyright,1994. 2 REINHOLD L, PAVEL B.!9-M .:0,.ro8E!9 M .:,1978. 4a,.o/$ M .:,1988.(l:2009-01-21)Te:62(1976),3,=,1VYoro!9#T,ro、(、H!9,;SS1;+(1970),3,V,Bo,ro!9T,|STQ“)S/”。(683:) 18aj,f.a-Si:HV;+ J .;Li,2002, 5(19):620-622. 190,d,k.GaAsAlGaInP LEDZ J .8/,2008,33(8):654-657. 20 LAGOWSKI J, JASTRZEBSKI L, CULLEN G W.Electroniccharacterization o
